Inventor · disambiguated record
Hsu-Shun Chen
Also filed as: CHEN HSU-SHUN
27 granted patents·2 pending applications·215 citations·filing 2002–2024
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD8MACRONIX INT CO LTD6CHEN HSU-SHUN5TAIWAN SEMICONDUCTOR MFG4LEE CHENG HUNG3
Top patents by PatentIndex Score
29 records- 0194US8629706B2Power switch and operation method thereofCHEN HSU-SHUN·Filed 2011·Granted Jan 14, 2014·21 cites·19 claims
- 0293US6759267B2Method for forming a phase change memoryMACRONIX INT CO LTD·Filed 2002·Granted Jul 6, 2004·67 cites·12 claims
- 0390US7020009B2Bistable magnetic device using soft magnetic intermediary materialMACRONIX INT CO LTD·Filed 2003·Granted Mar 28, 2006·46 cites·61 claims
- 0483US7436690B2Flat cell read only memory using common contacts for bit lines and virtual ground linesELAN MICROELECTRONICS CORP·Filed 2005·Granted Oct 14, 2008·11 cites·7 claims
- 0582US7075131B2Phase change memory deviceMACRONIX INT CO LTD·Filed 2004·Granted Jul 11, 2006·22 cites·6 claims
- 0681US10930344B2RRAM circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·4 cites·20 claims
- 0780US8406039B2Low-leakage power supply architecture for an SRAM arrayLEE CHENG HUNG·Filed 2010·Granted Mar 26, 2013·7 cites·14 claims
- 0877US8355277B2Biasing circuit and technique for SRAM data retentionTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 15, 2013·6 cites·20 claims
- 0976US9190995B2Multiple power domain electronic device and related methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·3 cites·20 claims
- 1075US12315562B2RRAM circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 1175US8928372B2Multiple power domain electronic device and related methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·3 cites·20 claims
- 1270US8451669B2Multi-power domain designCHEN HSU-SHUN·Filed 2012·Granted May 28, 2013·3 cites·20 claims
- 1369US8427888B2Word-line driver using level shifter at local control circuitLU CHUNG-JI·Filed 2010·Granted Apr 23, 2013·5 cites·12 claims
- 1469US8305831B2Power managementLEE CHENG HUNG·Filed 2010·Granted Nov 6, 2012·4 cites·22 claims
- 1568US12014776B2RRAM circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 1668US8279684B2Method for extending word-line pulsesCHEN HSU-SHUN·Filed 2010·Granted Oct 2, 2012·3 cites·12 claims
- 1766US7154765B1Flat-cell read-only memoryELAN MICROELECTRONICS CORP·Filed 2005·Granted Dec 26, 2006·6 cites·1 claims
- 1863US11393528B2RRAM circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 19, 2022·0 cites·20 claims
- 1962US7245523B2Bistable magnetic device using soft magnetic intermediary materialMACRONIX INT CO LTD·Filed 2005·Granted Jul 17, 2007·4 cites·36 claims
- 2046US9478297B2Multiple-time programmable memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·0 cites·20 claims
- 2145US9934864B2Method of setting a reference current in a nonvolatile memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·0 cites·20 claims
- 2244US9613710B2Multiple-time programmable memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 4, 2017·0 cites·20 claims
- 2343US9595340B2Nonvolatile memory device and method of setting a reference current in a nonvolatile memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 14, 2017·0 cites·26 claims
- 2443US9099168B2Method for extending word-line pulsesCHEN HSU-SHUN·Filed 2012·Granted Aug 4, 2015·0 cites·20 claims
- 2541US9324383B2Source line voltage regulation scheme for leakage reductionTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 26, 2016·0 cites·20 claims
- 2641US8174911B2Multi-power domain designCHEN HSU-SHUN·Filed 2010·Granted May 8, 2012·0 cites·20 claims
- 2740US2003106489A1Method for epitaxially growing a lead zirconate titanate thin filmMACRONIX INT CO LTD·Filed 2002·Application pending·0 cites
- 2835US2004036103A1Memory device and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2002·Application pending·0 cites
- 2934US8634268B2Memory circuit having decoding circuits and method of operating the sameLEE CHENG HUNG·Filed 2010·Granted Jan 21, 2014·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →