Inventor · disambiguated record

Hsin-Che Chiang

Also filed as: CHIANG HSIN-CHE

58 granted patents·18 pending applications·48 citations·filing 2003–2025

97Inventor score

Technology areasH10P H10D H10W B82Y H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD72 LIN CHIA-LIANG2 LERAIN TECH CO LTD1 UNIV NAT CHENG KUNG1

Top patents by PatentIndex Score

76 records

0195US11923194B2Epitaxial blocking layer for multi-gate devices and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
0294US12087844B2Semiconductor device structure with uniform threshold voltage distribution and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·1 cites·20 claims
0391US11282705B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
0491US9859273B2Semiconductor structure and manufacturing process thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 2, 2018·6 cites·20 claims
0589US10741558B2Nanosheet CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·5 cites·20 claims
0689US10128156B1FinFET device with reduced parasitic capacitance and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 13, 2018·8 cites·20 claims
0787US12362229B2Semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
0885US10854506B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·4 cites·20 claims
0985US10134873B2Semiconductor device gate structure and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·20 claims
1084US12376326B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
1184US11315785B2Epitaxial blocking layer for multi-gate devices and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·2 cites·20 claims
1284US10529629B2Methods of forming metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
1384US2025294871A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1484US2025098270A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1583US10991805B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·2 cites·20 claims
1683US10403737B2Method of forming a gate structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 3, 2019·2 cites·20 claims
1782US2024363731A1Semiconductor Device Structure With Uniform Threshold Voltage Distribution and Method of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1881US12199164B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
1980US12324235B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
2080US12183810B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
2180US12170320B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
2280US12027415B2Semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
2380US2025081497A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2479US10475895B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·2 cites·20 claims
2577US12015077B2Metal gate using monolayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
2677US11043567B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 22, 2021·1 cites·20 claims
2777US2024266167A1Epitaxial blocking layer for multi-gate devices and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2876US11799017B2Semiconductor device structure with uniform threshold voltage distribution and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
2976US11756962B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
3076US2025301766A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3176US2025241001A1Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3276US2025324734A1Semiconductor device structure with dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3375US11810978B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
3475US10714342B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·1 cites·20 claims
3573US11670695B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
3673US11670697B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
3773US2024379666A1Methods of forming an insulating feature in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3872US12490505B2Gate dielectric having a non-uniform thickness profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
3972US11521971B2Gate dielectric having a non-uniform thickness profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·0 cites·20 claims
4072US11476156B2Semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
4172US10879393B2Methods of fabricating semiconductor devices having gate structure with bent sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·1 cites·20 claims
4271US11848373B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·12 claims
4370US12349447B2Structure and formation method of semiconductor device with dielectric finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
4470US11374006B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
4570US11282942B2Semiconductor device structure with uniform threshold voltage distribution and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·0 cites·20 claims
4670US11257924B2Metal gate using monolayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
4768US11837602B2Semiconductor device structure having a plurality of threshold voltages and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
4867US12336272B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
4965US11923455B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
5065US10867806B2Semiconductor device gate structure and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims

Showing the top 50 of 76 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →