Inventor · disambiguated record
Hsu-Cheng Fan
Also filed as: FAN HSU-CHENG
10 granted patents·6 pending applications·14 citations·filing 2003–2025
82Inventor score
Files withNANYA TECHNOLOGY CORP16
Top patents by PatentIndex Score
16 records- 0193US11239111B1Method of fabricating semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2020·Granted Feb 1, 2022·7 cites·19 claims
- 0291US11742402B2Semiconductor structure and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2021·Granted Aug 29, 2023·2 cites·9 claims
- 0387US11139305B1Recessed access device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2020·Granted Oct 5, 2021·2 cites·16 claims
- 0480US12274088B2Semiconductor structureNANYA TECHNOLOGY CORP·Filed 2024·Granted Apr 8, 2025·0 cites·10 claims
- 0580US2025261358A1Method of manufacturing semiconductor device including 3d memory structureNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 0676US11967628B2Manufacturing method of semiconductor structureNANYA TECHNOLOGY CORP·Filed 2023·Granted Apr 23, 2024·0 cites·12 claims
- 0775US12127392B2Semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2023·Granted Oct 22, 2024·0 cites·9 claims
- 0875US2024121940A1Method for manufacturing semiconductor device including 3d memory structureNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 0973US2025008725A1Semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1072US2024121939A1Semiconductor device including 3d memory structureNANYA TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 1170US2025016996A1Memory device with tapered bit line contact and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 1268US12500120B2Semiconductor device with air gap and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 1366US11832435B2Semiconductor device and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2021·Granted Nov 28, 2023·0 cites·7 claims
- 1465US2024413008A1Semiconductor device with air gap and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 1555US11665887B2Semiconductor structure having a landing area extends from first portion to second portion of an active area across a bit-lineNANYA TECHNOLOGY CORP·Filed 2021·Granted May 30, 2023·0 cites·16 claims
- 1648US6788598B2Test key for detecting overlap between active area and deep trench capacitor of a DRAM and detection method thereofNANYA TECHNOLOGY CORP·Filed 2003·Granted Sep 7, 2004·3 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →