Inventor · disambiguated record
Hsun-Chung Kuang
Also filed as: KUANG HSUN-CHUNG
91 granted patents·29 pending applications·415 citations·filing 2010–2025
99Inventor score
Top patents by PatentIndex Score
120 records- 0199US9257399B23D integrated circuit and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 9, 2016·232 cites·19 claims
- 0298US10163651B1Structure and method to expose memory cells with different sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·32 cites·20 claims
- 0397US10529913B1Techniques for MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·15 cites·20 claims
- 0497US9425155B2Wafer bonding process and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·28 cites·20 claims
- 0596US12127483B2Doped sidewall spacer/etch stop layer for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·2 cites·20 claims
- 0696US11844226B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
- 0796US10790189B23D integrated circuit and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·9 cites·20 claims
- 0896US10665449B2Integrate rinse module in hybrid bonding platformTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 26, 2020·5 cites·20 claims
- 0995US12132066B2Capping structure along image sensor element to mitigate damage to active layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·2 cites·20 claims
- 1095US11961545B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
- 1195US11545202B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·3 cites·20 claims
- 1295US11430951B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
- 1395US11152426B2Memory device using an etch stop dielectric layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·4 cites·20 claims
- 1494US11887929B2Techniques to inhibit delamination from flowable gap-fill dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 1594US11856801B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 1694US9893120B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·9 cites·20 claims
- 1793US11404638B2Multi-doped data storage structure configured to improve resistive memory cell performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 1892US11183627B2MRAM MTJ top electrode connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·2 cites·20 claims
- 1992US11081334B2Particle prevention in wafer edge trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·6 cites·20 claims
- 2091US12310036B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 2191US11527713B2Top electrode via with low contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·3 cites·20 claims
- 2291US11495532B2Techniques to inhibit delamination from flowable gap-fill dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·2 cites·20 claims
- 2390US11610927B2Capping structure along image sensor element to mitigate damage to active layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 21, 2023·2 cites·20 claims
- 2489US12424256B2Circuit design and layout with high embedded memory densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 2589US9786628B2Air trench in packages incorporating hybrid bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 10, 2017·4 cites·20 claims
- 2688US12364171B2Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 2788US11787012B2Conditioner disk, chemical mechanical polishing device, and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·2 cites·20 claims
- 2888US11049767B2Semiconductor device and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·4 cites·20 claims
- 2988US10304903B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·4 cites·20 claims
- 3087US12232336B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 3187US2025365979A1Ferroelectric random access memory device with seed layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3286US12302663B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 3386US12255062B2Integrate rinse module in hybrid bonding platformTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 3486US12137572B2Ferroelectric memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
- 3586US10090196B23D integrated circuit and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 2, 2018·3 cites·20 claims
- 3686US2025255193A1Techniques for conductive structure connectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3785US12075636B2Threshold voltage-modulated memory device using variable-capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 3885US11183394B2Structure and method to expose memory cells with different sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·1 cites·20 claims
- 3985US10350726B2Chemical mechanical polishing system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·3 cites·20 claims
- 4085US2025311645A1Resistive memory cell with switching layer comprising one or more dopantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4185US2025048645A1Wakeup free approach to improve the ferroelectricity of feram using a stressor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4284US12290003B2Conductive structure connection with interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 4384US2025294776A1FeRAM WITH LAMINATED FERROELECTRIC FILM AND METHOD FORMING SAMETAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4483US12356631B2FeRAM with laminated ferroelectric film and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 4583US12266604B2Techniques to inhibit delamination from flowable gap-fill dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
- 4683US10510563B2Wafer carrier assemblyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·3 cites·20 claims
- 4783US2025366252A1Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4882US12113090B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 4982US11121315B2Structure improving reliability of top electrode contact for resistance switching RAM having cells of varying heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·1 cites·20 claims
- 5082US10857651B2Apparatus of chemical mechanical polishing and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 8, 2020·3 cites·20 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →