Inventor · disambiguated record
Hsing-Chih Lin
Also filed as: LIN HSING-CHIH
65 granted patents·36 pending applications·115 citations·filing 2013–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD101
Top patents by PatentIndex Score
101 records- 0199US11063038B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·7 cites·20 claims
- 0297US11942368B2Through silicon vias and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·3 cites·11 claims
- 0397US11404534B2Backside capacitor techniquesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·4 cites·20 claims
- 0497US11282769B2Oversized via as through-substrate-via (TSV) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·4 cites·20 claims
- 0596US12315843B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·2 cites·20 claims
- 0696US11791332B2Stacked semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 0796US11756862B2Oversized via as through-substrate-via (TSV) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
- 0894US11177302B2CMOS image sensor structure with microstructures formed on semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 16, 2021·3 cites·20 claims
- 0994US10629592B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·7 cites·20 claims
- 1094US10157946B2Method for forming CMOS image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·7 cites·20 claims
- 1192US11756920B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·2 cites·20 claims
- 1292US11705449B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·1 cites·20 claims
- 1392US10964692B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·5 cites·20 claims
- 1492US10727205B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·6 cites·20 claims
- 1592US10510592B2Integrated circuit (IC) structure for high performance and functional densityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·7 cites·20 claims
- 1691US11996429B2CMOS image sensor structure with microstructures on backside surface of semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·1 cites·20 claims
- 1790US11410972B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
- 1890US11322481B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
- 1990US9397130B1CMOS image sensor structure with crosstalk improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 19, 2016·5 cites·20 claims
- 2089US11195818B2Backside contact for thermal displacement in a multi-wafer stacked integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·5 cites·20 claims
- 2189US10916502B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 9, 2021·4 cites·20 claims
- 2288US9818779B2CMOS image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 14, 2017·4 cites·20 claims
- 2388US9246084B2RRAM cell including V-shaped structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 26, 2016·5 cites·20 claims
- 2487US2024274632A1Cmos image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2586US2025318303A1Semiconductor device including image sensor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2685US11955428B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 9, 2024·1 cites·20 claims
- 2785US2024355784A1Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2885US2025343113A1Through-substrate-via with reentrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2985US2025343076A1Vias and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3084US11862535B2Through-substrate-via with reentrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
- 3184US10163878B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·3 cites·20 claims
- 3284US2025359378A1Image sensor structure for crosstalk reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3384US2025105098A1Oversized via as through-substrate-via (tsv) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3484US2025344532A1Image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3583US12057446B2Stacked semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·20 claims
- 3683US2024379711A1Semiconductor device including image sensor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3782US12205868B2Oversized via as through-substrate-via (TSV) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 3882US12033919B2Backside or frontside through substrate via (TSV) landing on metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·1 cites·20 claims
- 3981US12218106B2Backside contact to improve thermal dissipation away from semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 4080US10504784B2Inductor structure for integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·2 cites·20 claims
- 4180US2024355815A1Stacked semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4279US12283564B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 4379US9263437B2Mechanisms for forming metal-insulator-metal (MIM) capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 16, 2016·5 cites·20 claims
- 4479US9257486B2RRAM array having lateral RRAM cells and vertical conducting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·3 cites·20 claims
- 4579US2025143000A1Semiconductor image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4679US2024347582A1Backside capacitor techniquesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4778US12322694B2Metal-insulator-metal device with improved performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 4878US12300669B2Backside contact for thermal displacement in a multi-wafer stacked integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 4978US2025221067A1Image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5078US2024266219A1Through silicon vias and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 101 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →