Inventor · disambiguated record
Hsien-Hsin Lin
Also filed as: LIN HSIEN-HSIN
37 granted patents·2 pending applications·1,014 citations·filing 2006–2023
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG12TAIWAN SEMICONDUCTOR MFG CO LTD7MEDIATEK INC5SU CHIEN CHANG3KWOK TSZ-MEI2
Top patents by PatentIndex Score
39 records- 0199US8652894B2Method for fabricating a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 18, 2014·394 cites·20 claims
- 0299US8362575B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·242 cites·18 claims
- 0397US8263451B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2010·Granted Sep 11, 2012·83 cites·20 claims
- 0496US8310013B2Method of fabricating a FinFET deviceLIN HSIEN-HSIN·Filed 2010·Granted Nov 13, 2012·79 cites·19 claims
- 0595US8975144B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 10, 2015·18 cites·20 claims
- 0695US7494884B2SiGe selective growth without a hard maskTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 24, 2009·36 cites·20 claims
- 0793US9515187B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·9 cites·20 claims
- 0892US8937353B2Dual epitaxial process for a finFET deviceCHEN HUNG-KAI·Filed 2010·Granted Jan 20, 2015·23 cites·18 claims
- 0992US8796788B2Semiconductor devices with strained source/drain structuresKWOK TSZ-MEI·Filed 2011·Granted Aug 5, 2014·14 cites·7 claims
- 1090US8846461B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 30, 2014·8 cites·17 claims
- 1190US8344447B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 1, 2013·13 cites·11 claims
- 1289US9666691B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2012·Granted May 30, 2017·9 cites·17 claims
- 1388US8404538B2Device with self aligned stressor and method of making sameLAI KAO-TING·Filed 2009·Granted Mar 26, 2013·17 cites·20 claims
- 1488US8357574B2Method of fabricating epitaxial structuresTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 22, 2013·9 cites·20 claims
- 1586US8558289B2Transistors having a composite strain structure, integrated circuits, and fabrication methods thereofCHENG CHUN-FAI·Filed 2010·Granted Oct 15, 2013·8 cites·21 claims
- 1685US8709897B2High performance strained source-drain structure and method of fabricating the sameSUNG HSUEH-CHANG·Filed 2010·Granted Apr 29, 2014·9 cites·20 claims
- 1784US8835982B2Method of manufacturing strained source/drain structuresKWOK TSZ-MEI·Filed 2011·Granted Sep 16, 2014·8 cites·20 claims
- 1883US11587846B2Semiconductor device and method of forming the sameMEDIATEK INC·Filed 2020·Granted Feb 21, 2023·1 cites·20 claims
- 1982US9117905B2Method for incorporating impurity element in EPI silicon processSU CHIEN-CHANG·Filed 2009·Granted Aug 25, 2015·7 cites·20 claims
- 2082US8487354B2Method for improving selectivity of epi processCHEN KUAN-YU·Filed 2009·Granted Jul 16, 2013·6 cites·20 claims
- 2179US12408362B2Method of forming devices with strained source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 2277US8921177B2Method of fabricating an integrated circuit deviceYEH MING-HSI·Filed 2011·Granted Dec 30, 2014·8 cites·7 claims
- 2377US8765556B2Method of fabricating strained structure in semiconductor deviceHSU YU-RUNG·Filed 2009·Granted Jul 1, 2014·5 cites·20 claims
- 2476US9224737B2Dual epitaxial process for a finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 29, 2015·3 cites·20 claims
- 2573US12191226B2Method of manufacturing heat dissipation substrate with high thermal conductivity for semiconductor deviceMEDIATEK INC·Filed 2023·Granted Jan 7, 2025·0 cites·18 claims
- 2673US9373695B2Method for improving selectivity of epi processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 21, 2016·2 cites·20 claims
- 2767US8343872B2Method of forming strained structures with compound profiles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 1, 2013·3 cites·13 claims
- 2861US11411098B2Devices with strained source/drain structures and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 9, 2022·0 cites·20 claims
- 2959US12354882B2Semiconductor structure and method for forming the sameMEDIATEK INC·Filed 2022·Granted Jul 8, 2025·0 cites·42 claims
- 3058US9842910B2Methods for manufacturing devices with source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 12, 2017·0 cites·20 claims
- 3157US9911826B2Devices with strained source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 6, 2018·0 cites·15 claims
- 3254US9293537B2High performance strained source-drain structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 22, 2016·0 cites·20 claims
- 3351US9356150B2Method for incorporating impurity element in EPI silicon processTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·0 cites·20 claims
- 3450US2013161650A1Device with self aligned stressor and method of making sameTAIWAN SEMICONDUCTION MFG CO LTD·Filed 2013·Application pending·0 cites
- 3549US2011084355A1Isolation Structure For Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
- 3645US10957589B2Self-aligned contact and method for forming the sameMEDIATEK INC·Filed 2018·Granted Mar 23, 2021·0 cites·13 claims
- 3745US9564509B2Method of fabricating an integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 7, 2017·0 cites·20 claims
- 3841US10741469B2Thermal via arrangement for multi-channel semiconductor deviceMEDIATEK INC·Filed 2017·Granted Aug 11, 2020·0 cites·18 claims
- 3939US9537004B2Source/drain formation and structureWU CHII-MING·Filed 2011·Granted Jan 3, 2017·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →