Inventor · disambiguated record
Hsiao-Kuan Wei
Also filed as: WEI HSIAO-KUAN
22 granted patents·9 pending applications·34 citations·filing 2007–2025
92Inventor score
Top patents by PatentIndex Score
31 records- 0196US11380542B2Selective capping processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·3 cites·20 claims
- 0294US11710638B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·2 cites·20 claims
- 0394US10770288B2Selective capping processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·9 cites·20 claims
- 0493US11024505B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 1, 2021·7 cites·20 claims
- 0593US10854459B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 1, 2020·7 cites·20 claims
- 0688US10790142B2Selective capping processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·4 cites·20 claims
- 0787US2025308907A1Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0882US12354876B2Gate structure passivating species drive-in method and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 0982US12294022B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 1081US2025241048A1Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1178US11830742B2Selective capping processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 1276US2025365997A1Metal-insulator-metal device structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1374US11721740B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 1471US11088257B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·0 cites·20 claims
- 1569US2025351738A1Magneto-resistive random-access memory (mram) devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1669US2025203892A1Metal-insulator-metal device structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1768US9679984B2Metal gate structure with multi-layer compositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 13, 2017·2 cites·19 claims
- 1867US2024387615A1Semiconductor devices and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1965US12514130B2Magneto-resistive random-access memory (MRAM) devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·8 claims
- 2065US11211465B2Semiconductor device having gate dielectric and inhibitor film over gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·0 cites·20 claims
- 2162US10510854B2Semiconductor device having gate body and inhibitor film between conductive prelayer over gate body and conductive layer over inhibitor filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·16 claims
- 2260US12363924B2Semiconductor devices and methods for fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 2360US10707318B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 2458US10014382B2Semiconductor device with sidewall passivation and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 3, 2018·0 cites·20 claims
- 2553US10998414B2Metal gate structure with multi-layer compositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 4, 2021·0 cites·20 claims
- 2651US2025022911A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2750US2025167086A1Surface oxidation layer for metal voiding reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2848US10515807B1Methods of fabricating semiconductor devices with metal-gate work-function tuning layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·20 claims
- 2944US11145747B2FinFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 12, 2021·0 cites·20 claims
- 3042US11201227B2Gate structure with barrier layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 14, 2021·0 cites·20 claims
- 3137US2008129207A1Plasma device for liquid crystal alignmentUNIV NAT CHIAO TUNG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →