Inventor · disambiguated record
Hsiang-Chieh Yen
Also filed as: YEN HSIANG C · Yen Hsiang-Chieh
9 granted patents·1 pending application·34 citations·filing 1994–2025
81Inventor score
Top patents by PatentIndex Score
10 records- 0184US12027602B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jul 2, 2024·1 cites·12 claims
- 0283US12453149B2Fabricating method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2024·Granted Oct 21, 2025·0 cites·6 claims
- 0380US12490447B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Dec 2, 2025·0 cites·16 claims
- 0479US9728467B2Method for modulating work function of semiconductor device having metal gate structure by gas treatmentUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 8, 2017·3 cites·18 claims
- 0571US11990518B2Semiconductor device and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted May 21, 2024·0 cites·16 claims
- 0665US9478628B1Metal gate forming processUNITED MICROELECTRONICS CORP·Filed 2015·Granted Oct 25, 2016·1 cites·16 claims
- 0762US2025183102A1Manufacturing method of multiple-level interconnect structureUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0861US12255111B2Multiple-level interconnect structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Mar 18, 2025·0 cites·7 claims
- 0958US5572698ASystem and method for allocating memory resources where the category of a memory resource determines where on a circular stack a pointer to the memory resource is placedROLM CO·Filed 1994·Granted Nov 5, 1996·29 cites·10 claims
- 1039US9576803B2Method for tuning metal gate work function before contact formation in fin-shaped field effect transistor manufacturing processUNITED MICROELECTRONICS CORP·Filed 2015·Granted Feb 21, 2017·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →