Inventor · disambiguated record
Hudong Chang
Also filed as: CHANG HUDONG
2 granted patents·1 pending application·5 citations·filing 2015–2019
43Inventor score
Files withINST OF MICROELECTRONICS CAS1INST OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCE1WAYTHON INTELLIGENT TECH SUZHOU CO LTD1
Top patents by PatentIndex Score
3 records- 0177US10192963B2Composite gate dielectric layer applied to group III-V substrate and method for manufacturing the sameINST OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCE·Filed 2015·Granted Jan 29, 2019·5 cites·13 claims
- 0236US10644100B2Dual-gate PMOS field effect transistor with InGaAs channelINST OF MICROELECTRONICS CAS·Filed 2016·Granted May 5, 2020·0 cites·13 claims
- 0328US2020220000A1GaN-Based HEMT DeviceWAYTHON INTELLIGENT TECH SUZHOU CO LTD·Filed 2019·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Hudong Chang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →