Inventor · disambiguated record
Huai-Tzu Chiang
Also filed as: CHIANG HUAI-TZU
19 granted patents·7 pending applications·56 citations·filing 2015–2025
91Inventor score
Files withUNITED MICROELECTRONICS CORP26
Top patents by PatentIndex Score
26 records- 0197US9502519B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·19 cites·19 claims
- 0294US10714607B1High electron mobility transistorUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jul 14, 2020·10 cites·18 claims
- 0392US10068963B2Fin-type field effect transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 4, 2018·7 cites·9 claims
- 0489US12396195B2High electron mobility transistor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 19, 2025·1 cites·7 claims
- 0588US10923586B2High electron mobility transistor (HEMT)UNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 16, 2021·4 cites·10 claims
- 0687US9871102B2Method of forming a single-crystal nanowire finFETUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 16, 2018·4 cites·11 claims
- 0787US9508834B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 29, 2016·5 cites·17 claims
- 0881US9666687B1Method for forming semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 30, 2017·3 cites·18 claims
- 0980US9281400B1Method of fabricating a semiconductor device with fin-shaped structuresUNITED MICROELECTRONICS CORP·Filed 2015·Granted Mar 8, 2016·3 cites·20 claims
- 1078US2025344431A1Manufacturing method of high electron mobility transistor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1172US2025248059A1Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1267US2025194130A1High electron mobility transistor and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1366US2024047554A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 1465US2024021702A1High electron mobility transistor and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 1562US11843046B2High electron mobility transistor (HEMT)UNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 12, 2023·0 cites·6 claims
- 1658US10439023B2Fin-type field effect transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 8, 2019·0 cites·12 claims
- 1756US10431652B2Semiconductor device with single-crystal nanowire FinFETUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 1, 2019·0 cites·5 claims
- 1856US10177231B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 8, 2019·0 cites·9 claims
- 1952US9837493B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 5, 2017·0 cites·7 claims
- 2052US9698218B2Method for forming semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jul 4, 2017·0 cites·9 claims
- 2148US9431482B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 30, 2016·0 cites·7 claims
- 2246US12224338B2HEMT and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Feb 11, 2025·0 cites·17 claims
- 2341US9590041B1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Mar 7, 2017·0 cites·8 claims
- 2435US10497797B2Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 3, 2019·0 cites·6 claims
- 2533US2016351712A1Method for increasing stress in the channel region of fin field effect transistorUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2633US2016233303A1Semiconductor structure and manufacturing methods thereofUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →