Inventor · disambiguated record
Hung Hung
Also filed as: HUNG HUNG-WEI
45 granted patents·15 pending applications·48 citations·filing 2011–2023
96Inventor score
Top patents by PatentIndex Score
60 records- 0195US11264899B2Semiconductor deviceTOSHIBA KK·Filed 2020·Granted Mar 1, 2022·4 cites·13 claims
- 0291US11508647B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Nov 22, 2022·2 cites·20 claims
- 0391US10771057B1Semiconductor deviceTOSHIBA KK·Filed 2020·Granted Sep 8, 2020·3 cites·6 claims
- 0489US8785943B2Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layerSHIODA TOMONARI·Filed 2012·Granted Jul 22, 2014·10 cites·33 claims
- 0588US10651276B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted May 12, 2020·6 cites·17 claims
- 0684US12328924B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Jun 10, 2025·1 cites·16 claims
- 0784US12027614B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Jul 2, 2024·1 cites·13 claims
- 0881US10868163B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted Dec 15, 2020·3 cites·14 claims
- 0978US8525194B2Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layerSHIODA TOMONARI·Filed 2011·Granted Sep 3, 2013·3 cites·18 claims
- 1075US10707312B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Jul 7, 2020·2 cites·11 claims
- 1175US8952401B2Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layerSUGIYAMA NAOHARU·Filed 2011·Granted Feb 10, 2015·3 cites·15 claims
- 1275US8928000B2Nitride semiconductor wafer including different lattice constantsHUNG HUNG·Filed 2012·Granted Jan 6, 2015·4 cites·17 claims
- 1374US9627489B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 18, 2017·2 cites·20 claims
- 1472US12170316B2Nitride semiconductor device with element isolation areaTOSHIBA KK·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 1571US10998433B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted May 4, 2021·1 cites·9 claims
- 1668US10763352B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Sep 1, 2020·1 cites·14 claims
- 1767US9202873B2Semiconductor wafer for semiconductor device having a multilayerTOSHIBA KK·Filed 2013·Granted Dec 1, 2015·1 cites·23 claims
- 1863US9478706B2Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layerTOSHIBA KK·Filed 2014·Granted Oct 25, 2016·0 cites·23 claims
- 1961US11830916B2Nitride semiconductor device with element isolation areaTOSHIBA KK·Filed 2021·Granted Nov 28, 2023·0 cites·18 claims
- 2061US9006706B2Semiconductor light emitting deviceTOSHIBA KK·Filed 2013·Granted Apr 14, 2015·1 cites·17 claims
- 2161US2022140731A1Semiconductor deviceTOSHIBA KK·Filed 2022·Application pending·0 cites
- 2258US12444668B2Semiconductor deviceTOSHIBA KK·Filed 2023·Granted Oct 14, 2025·0 cites·7 claims
- 2358US8969891B2Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layerTOSHIBA KK·Filed 2014·Granted Mar 3, 2015·0 cites·11 claims
- 2457US12362264B2Semiconductor deviceTOSHIBA KK·Filed 2022·Granted Jul 15, 2025·0 cites·10 claims
- 2557US12046668B2Semiconductor deviceTOSHIBA KK·Filed 2022·Granted Jul 23, 2024·0 cites·12 claims
- 2657US8759851B2Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layerTOSHIBA KK·Filed 2013·Granted Jun 24, 2014·0 cites·10 claims
- 2757US2024322027A1Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2023·Application pending·0 cites
- 2857US2024321977A1Semiconductor device and method for manufacturingTOSHIBA KK·Filed 2023·Application pending·0 cites
- 2956US2018308940A1Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layerALPAD CORP·Filed 2018·Application pending·0 cites
- 3055US2015102381A1Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layerTOSHIBA KK·Filed 2014·Application pending·0 cites
- 3155US2024105826A1Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2023·Application pending·0 cites
- 3254US10008571B2Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layerALPAD CORP·Filed 2015·Granted Jun 26, 2018·0 cites·16 claims
- 3354US8835983B2Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layersTOSHIBA KK·Filed 2013·Granted Sep 16, 2014·0 cites·7 claims
- 3454US2024088280A1Nitride semiconductor deviceTOSHIBA KK·Filed 2023·Application pending·0 cites
- 3552US11948864B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 3652US9123831B2Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layerTOSHIBA KK·Filed 2013·Granted Sep 1, 2015·0 cites·8 claims
- 3751US12062651B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Aug 13, 2024·0 cites·16 claims
- 3851US8809101B2Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layerHWANG JONGIL·Filed 2011·Granted Aug 19, 2014·0 cites·7 claims
- 3950US12273101B2Semiconductor deviceTOSHIBA KK·Filed 2023·Granted Apr 8, 2025·0 cites·19 claims
- 4050US11251298B2Power semiconductor deviceTOSHIBA KK·Filed 2020·Granted Feb 15, 2022·0 cites·11 claims
- 4148US9305773B2Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layerTOSHIBA KK·Filed 2015·Granted Apr 5, 2016·0 cites·15 claims
- 4247US12002858B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 4347US9287441B2Method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2013·Granted Mar 15, 2016·0 cites·20 claims
- 4447US9065003B2Semiconductor light emitting device and semiconductor waferYOSHIDA HISASHI·Filed 2012·Granted Jun 23, 2015·0 cites·21 claims
- 4546US10593793B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Mar 17, 2020·0 cites·13 claims
- 4643US11290100B2Semiconductor deviceTOSHIBA KK·Filed 2020·Granted Mar 29, 2022·0 cites·21 claims
- 4743US8779336B2Ring type infrared heating deviceHUNG HUNG-WEI·Filed 2012·Granted Jul 15, 2014·0 cites·8 claims
- 4843US8729575B2Semiconductor light emitting device and manufacturing method of the sameHWANG JONGIL·Filed 2011·Granted May 20, 2014·0 cites·13 claims
- 4941US10074739B2Semiconductor device having electric field near drain electrode alleviatedTOSHIBA KK·Filed 2016·Granted Sep 11, 2018·0 cites·12 claims
- 5041US9543146B2Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical materialTOSHIBA KK·Filed 2015·Granted Jan 10, 2017·0 cites·20 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →