Inventor · disambiguated record
Hung-Hsin Kuo
Also filed as: KUO HUNG-HSIN
27 granted patents·1 pending application·37 citations·filing 2009–2025
93Inventor score
Top patents by PatentIndex Score
28 records- 0191US8664701B2Rectifier with vertical MOS structureCHAO KUO-LIANG·Filed 2012·Granted Mar 4, 2014·14 cites·10 claims
- 0285US8405184B2Trench schottky diode and method for manufacturing the sameCHAO KOU-LIANG·Filed 2010·Granted Mar 26, 2013·10 cites·8 claims
- 0377US8618626B2Trench Schottky rectifier device and method for manufacturing the sameCHAO KOU-LIANG·Filed 2010·Granted Dec 31, 2013·3 cites·6 claims
- 0475US8704298B1MOS diode with termination structure and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted Apr 22, 2014·4 cites·16 claims
- 0574US8853748B2Rectifier with vertical MOS structurePFC DEVICE CORP·Filed 2014·Granted Oct 7, 2014·2 cites·10 claims
- 0671US8728878B2MOS P-N junction diode device and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted May 20, 2014·3 cites·12 claims
- 0761US9905666B2Trench schottky rectifier device and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2017·Granted Feb 27, 2018·0 cites·8 claims
- 0860US9362350B2MOS P-N junction diode with enhanced response speed and manufacturing method thereofPFC DEVICE HOLDINGS LTD·Filed 2014·Granted Jun 7, 2016·0 cites·3 claims
- 0960US2025303584A1Vacuumizing assembly and vacuumizing device with replaceable vacuumizing assemblyCHIUN MAI COMMUNICATION SYSTEMS INC·Filed 2025·Application pending·0 cites
- 1059US9865700B2MOS P-N junction diode with enhanced response speed and manufacturing method thereofPFC DEVICE HOLDINGS LTD·Filed 2017·Granted Jan 9, 2018·0 cites·8 claims
- 1159US9853120B2Trench Schottky rectifier device and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2016·Granted Dec 26, 2017·0 cites·8 claims
- 1259US9219170B2Trench schottky rectifier device and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2014·Granted Dec 22, 2015·0 cites·6 claims
- 1359US8993427B2Method for manufacturing rectifier with vertical MOS structurePFC DEVICE CORP·Filed 2014·Granted Mar 31, 2015·0 cites·20 claims
- 1458US8558315B2Trench isolation MOS P-N junction diode device and method for manufacturing the sameCHEN MEI-LING·Filed 2011·Granted Oct 15, 2013·1 cites·3 claims
- 1557US9536976B2Trench schottky rectifier device and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2015·Granted Jan 3, 2017·0 cites·6 claims
- 1657US8890279B2Trench Schottky rectifier device and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted Nov 18, 2014·0 cites·6 claims
- 1755US9029235B2Trench isolation MOS P-N junction diode device and method for manufacturing the samePFC DEVICE CORP·Filed 2014·Granted May 12, 2015·0 cites·5 claims
- 1855US8921949B2MOS P-N junction diode with enhanced response speed and manufacturing method thereofPFC DEVICE CORP·Filed 2012·Granted Dec 30, 2014·0 cites·1 claims
- 1954US8735228B2Trench isolation MOS P-N junction diode device and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted May 27, 2014·0 cites·5 claims
- 2050US9595617B2MOS P-N junction diode with enhanced response speed and manufacturing method thereofPFC DEVICE HOLDING LTD·Filed 2016·Granted Mar 14, 2017·0 cites·9 claims
- 2149US9064904B2MOS P-N junction Schottky diode device and method for manufacturing the samePFC DEVICE CORP·Filed 2014·Granted Jun 23, 2015·0 cites·12 claims
- 2248US8753963B2Manufacturing method of multi-trench termination structure for semiconductor devicePFC DEVICE CORP·Filed 2013·Granted Jun 17, 2014·0 cites·10 claims
- 2347US8796808B2MOS P-N junction schottky diode device and method for manufacturing the sameCHAO KUO-LIANG·Filed 2009·Granted Aug 5, 2014·0 cites·15 claims
- 2447US8390081B2MOS P-N junction diode device and method for manufacturing the sameCHAO KUO-LIANG·Filed 2009·Granted Mar 5, 2013·0 cites·4 claims
- 2546US8927401B2Trench Schottky diode and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted Jan 6, 2015·0 cites·12 claims
- 2645US8680590B2Multi-trench termination structure for semiconductor deviceKAO LUNG-CHING·Filed 2012·Granted Mar 25, 2014·0 cites·8 claims
- 2743US9240470B2High-performance reverse-conduction field-stop (RCFS) insulated gate bipolar transistor and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2014·Granted Jan 19, 2016·0 cites·12 claims
- 2841US8809946B2Wide trench termination structure for semiconductor devicePFC DEVICE CORP·Filed 2013·Granted Aug 19, 2014·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →