Inventor · disambiguated record

Huan-Just Lin

Also filed as: LIN HUAN-JUST

124 granted patents·39 pending applications·591 citations·filing 1999–2025

99Inventor score

Technology areasH10P H10W H10D H10N B24B

Files withTAIWAN SEMICONDUCTOR MFG CO LTD122 TAIWAN SEMICONDUCTOR MFG31 LEE SHEN-NAN3 YANG JI-YI2 CHUANG HAK-LAY1

Top patents by PatentIndex Score

163 records

0198US11239083B2Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·4 cites·20 claims
0298US9224833B2Method of forming a vertical deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·33 cites·20 claims
0397US11688606B2Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·2 cites·20 claims
0497US11581218B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·5 cites·20 claims
0596US12057345B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·2 cites·20 claims
0696US11664272B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·3 cites·20 claims
0796US10535524B1Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·9 cites·20 claims
0894US11916131B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 27, 2024·2 cites·20 claims
0994US11769770B2Methods of forming a semiconductor device having an air spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·20 claims
1094US7378713B2Semiconductor devices with dual-metal gate structures and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 27, 2008·37 cites·26 claims
1193US9633907B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·10 cites·20 claims
1293US9368603B2Contact for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 14, 2016·11 cites·19 claims
1392US10505014B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·4 cites·17 claims
1490US12349435B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
1590US9978850B2Contact for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·4 cites·20 claims
1690US6590344B2Selectively controllable gas feed zones for a plasma reactorTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 8, 2003·55 cites·19 claims
1790US2025311351A1Vertical Device Having a Protrusion SourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1889US12040233B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·2 cites·20 claims
1989US10854728B2Vertical device having a protrusion structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·2 cites·20 claims
2089US9449880B1Fin patterning methods for increased process marginTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·6 cites·20 claims
2189US9318447B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·6 cites·17 claims
2289US2025366190A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2388US6174818B1Method of patterning narrow gate electrodeTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·77 cites·15 claims
2488US2025364327A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2587US9805968B2Vertical structure having an etch stop over portion of the sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 31, 2017·3 cites·20 claims
2687US8822283B2Self-aligned insulated film for high-k metal gate deviceNG JIN-AUN·Filed 2011·Granted Sep 2, 2014·7 cites·20 claims
2787US2025366018A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2887US2025359293A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2987US2025364323A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3087US2024387178A1Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3186US9570358B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 14, 2017·3 cites·20 claims
3286US8153526B2High planarizing method for use in a gate last processLEE SHEN-NAN·Filed 2009·Granted Apr 10, 2012·13 cites·20 claims
3385US12148620B2Tuning threshold voltage through meta stable plasma treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
3485US10879129B2Self-aligned nanowire formation using double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
3585US9412614B2Nano wire structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·4 cites·20 claims
3685US8546227B2Contact for high-K metal gate deviceCHUANG HAK-LAY·Filed 2011·Granted Oct 1, 2013·7 cites·13 claims
3784US11705491B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·1 cites·20 claims
3883US11923433B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·1 cites·20 claims
3982US12477821B2Semiconductor device having air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
4082US12293947B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
4182US12237228B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
4282US11355399B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·1 cites·20 claims
4382US9132523B2Chemical mechanical polish process control for improvement in within-wafer thickness uniformityLEE SHEN-NAN·Filed 2012·Granted Sep 15, 2015·5 cites·20 claims
4482US7390753B2In-situ plasma treatment of advanced resists in fine pattern definitionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 24, 2008·9 cites·20 claims
4582US2025351559A1Transistor source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4681US12107003B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
4781US10553492B2Selective NFET/PFET recess of source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·2 cites·20 claims
4881US7157350B2Method of forming SOI-like structure in a bulk semiconductor substrate using self-organized atomic migrationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 2, 2007·23 cites·42 claims
4981US2025261437A1Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
5080US12446296B2Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims

Showing the top 50 of 163 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →