Inventor · disambiguated record
Huaxiang Yin
Also filed as: YIN HUAXIANG
93 granted patents·42 pending applications·478 citations·filing 2004–2025
99Inventor score
Files withINST OF MICROELECTRONICS CAS34SAMSUNG ELECTRONICS CO LTD33YIN HUAXIANG31JUNIPER NETWORKS INC6MA XIAOLONG6
Top patents by PatentIndex Score
135 records- 0197US8809173B1Fin field-effect transistors and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Aug 19, 2014·33 cites·14 claims
- 0295US7297615B2Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 20, 2007·32 cites·16 claims
- 0394US7566364B2Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 28, 2009·28 cites·19 claims
- 0493US8187905B2Method of forming a microlens and a method for manufacturing an image sensorYIN HUAXIANG·Filed 2010·Granted May 29, 2012·9 cites·30 claims
- 0592US7479442B2Method of manufacturing single crystal Si filmSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 20, 2009·25 cites·17 claims
- 0690US9391073B2FinFET device and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2013·Granted Jul 12, 2016·13 cites·9 claims
- 0789US9892912B2Method of manufacturing stacked nanowire MOS transistorINST OF MICROELECTRONICS CAS·Filed 2015·Granted Feb 13, 2018·7 cites·10 claims
- 0889US7994588B2Inverted nonvolatile memory device, stack module, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 9, 2011·16 cites·29 claims
- 0988US8716090B2Semiconductor device manufacturing methodQIN CHANGLIANG·Filed 2012·Granted May 6, 2014·11 cites·20 claims
- 1088US8652891B1Semiconductor device and method of manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Feb 18, 2014·10 cites·9 claims
- 1188US8466028B2Method for manufacturing multigate deviceYIN HUAXIANG·Filed 2011·Granted Jun 18, 2013·10 cites·8 claims
- 1288US8309404B2Poly-Si thin film transistor and organic light-emitting display having the sameYIN HUAXIANG·Filed 2011·Granted Nov 13, 2012·8 cites·3 claims
- 1388US7611932B2Method of manufacturing a thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 3, 2009·13 cites·16 claims
- 1487US10390290B1Flow processing migrationJUNIPER NETWORKS INC·Filed 2016·Granted Aug 20, 2019·11 cites·20 claims
- 1587US9337102B2Method for manufacturing semiconductor device including doping epitaxial source drain extension regionsINST OF MICROELECTROICS CHINESE ACADEMY OF SCIENCES·Filed 2015·Granted May 10, 2016·9 cites·10 claims
- 1687US8912070B2Method for manufacturing semiconductor deviceMA XIAOLONG·Filed 2012·Granted Dec 16, 2014·9 cites·9 claims
- 1786US9054193B2Fin field-effect transistorsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Jun 9, 2015·6 cites·19 claims
- 1886US8384162B2Device having adjustable channel stress and method thereofINST OF MICROELECTRONICS CAS·Filed 2011·Granted Feb 26, 2013·7 cites·11 claims
- 1986US7989899B2Transistor, inverter including the same and methods of manufacturing transistor and inverterSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 2, 2011·11 cites·11 claims
- 2085US9373622B2CMOS device with improved accuracy of threshold voltage adjustment and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2015·Granted Jun 21, 2016·5 cites·9 claims
- 2185US7999322B2Poly-Si thin film transistor and organic light-emitting display having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 16, 2011·6 cites·18 claims
- 2285US7859054B2Poly-Si thin film transistor and organic light-emitting display having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 28, 2010·9 cites·5 claims
- 2385US7842994B2Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·11 cites·15 claims
- 2485US7557411B2Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 7, 2009·12 cites·16 claims
- 2584US8802533B1Semiconductor device and method of manufacturing the sameQIN CHANGLIANG·Filed 2012·Granted Aug 12, 2014·8 cites·14 claims
- 2684US8754482B2Semiconductor device and manufacturing method thereofYIN HUAXIANG·Filed 2011·Granted Jun 17, 2014·6 cites·20 claims
- 2784US8405062B2Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory deviceYIN HUAXIANG·Filed 2007·Granted Mar 26, 2013·9 cites·12 claims
- 2883US8936988B2Methods for manufacturing a MOSFET using a stress liner of diamond-like carbon on the substrateINST OF MICROELECTRONICS CAS·Filed 2014·Granted Jan 20, 2015·5 cites·14 claims
- 2981US11839085B2Three-dimensional vertical single transistor ferroelectric memory and manufacturing method thereofINST OF MICROELECTRONICS CAS·Filed 2019·Granted Dec 5, 2023·5 cites·16 claims
- 3081US9384986B2Dual-metal gate CMOS devices and method for manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Jul 5, 2016·6 cites·10 claims
- 3181US8796744B1Semiconductor deviceMA XIAOLONG·Filed 2012·Granted Aug 5, 2014·6 cites·10 claims
- 3281US7750424B2Microlens and an image sensor including a microlensSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·4 cites·24 claims
- 3381US7416924B2Organic light emitting display with single crystalline silicon TFT and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·8 cites·14 claims
- 3480US9431504B2Semiconductor device and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2015·Granted Aug 30, 2016·4 cites·9 claims
- 3580US9385212B2Method for manufacturing semiconductor deviceINST OF MICROELECTRONICS CAS·Filed 2015·Granted Jul 5, 2016·3 cites·16 claims
- 3680US8994119B2Semiconductor device with gate stacks having stress and method of manufacturing the sameYIN HUAXIANG·Filed 2012·Granted Mar 31, 2015·6 cites·19 claims
- 3780US7977978B2Inverter, method of manufacturing the same, and logic circuit including the inverterSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·6 cites·16 claims
- 3880US7470579B2Method of manufacturing a thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 30, 2008·8 cites·7 claims
- 3979US9054018B2Semiconductor device and method for manufacturing the sameMA XIAOLONG·Filed 2012·Granted Jun 9, 2015·5 cites·14 claims
- 4079US7511381B2Thin film transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 31, 2009·5 cites·11 claims
- 4177US9117906B2Fin field-effect transistors and fabrication method thereofSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Aug 25, 2015·4 cites·13 claims
- 4277US7662678B2Method of forming a more highly-oriented silicon layer and substrate having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·5 cites·27 claims
- 4374US9043911B1Distributed learning and aging for management of internet protocol (IP) addressesJUNIPER NETWORKS INC·Filed 2014·Granted May 26, 2015·3 cites·20 claims
- 4474US9006057B2Method of manufacturing semiconductor deviceQIN CHANGLIANG·Filed 2012·Granted Apr 14, 2015·3 cites·7 claims
- 4574US8841190B2MOS device for making the source/drain region closer to the channel region and method of manufacturing the sameQIN CHANGLIANG·Filed 2012·Granted Sep 23, 2014·4 cites·11 claims
- 4674US8816326B2Semiconductor device and manufacturing method thereofYIN HUAXIANG·Filed 2011·Granted Aug 26, 2014·7 cites·21 claims
- 4774US8383472B2Inverter, method of manufacturing the same, and logic circuit including the inverterSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Feb 26, 2013·3 cites·18 claims
- 4874US7772711B2Semiconductor device including single crystal silicon layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 10, 2010·6 cites·22 claims
- 4973US8022408B2Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 20, 2011·2 cites·17 claims
- 5073US8021936B2Method of manufacturing thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·3 cites·9 claims
Showing the top 50 of 135 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →