Inventor · disambiguated record
Hui Zang
Also filed as: ZANG HUI
403 granted patents·43 pending applications·2,283 citations·filing 2002–2023
99Inventor score
Files withGLOBALFOUNDRIES INC290OMNIVISION TECH INC40IBM27GLOBALFOUNDRIES US INC25SPRINT COMMUNICATIONS CO18
Top patents by PatentIndex Score
446 records- 0199US9831346B1FinFETs with air-gap spacers and methods for forming the sameGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 28, 2017·33 cites·11 claims
- 0298US10236213B1Gate cut structure with liner spacer and related methodGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·25 cites·9 claims
- 0398US10163635B1Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related methodGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·26 cites·13 claims
- 0498US10103238B1Nanosheet field-effect transistor with full dielectric isolationGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 16, 2018·57 cites·20 claims
- 0598US10103247B1Vertical transistor having buried contact, and contacts using work function metals and silicidesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 16, 2018·28 cites·20 claims
- 0698US9960077B1Ultra-scale gate cut pillar with overlay immunity and method for producing the sameGLOBALFOUNDRIES INC·Filed 2017·Granted May 1, 2018·24 cites·20 claims
- 0798US9847391B1Stacked nanosheet field-effect transistor with diode isolationGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 19, 2017·35 cites·20 claims
- 0898US8639757B1User localization using friend location informationZANG HUI·Filed 2011·Granted Jan 28, 2014·189 cites·16 claims
- 0997US12002869B2Gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 4, 2024·4 cites·16 claims
- 1097US11450696B1Dual floating diffusion transistor with vertical gate structure for image sensorOMNIVISION TECH INC·Filed 2021·Granted Sep 20, 2022·7 cites·30 claims
- 1197US10269983B2Stacked nanosheet field-effect transistor with air gap spacersGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 23, 2019·20 cites·20 claims
- 1297US10249538B1Method of forming vertical field effect transistors with different gate lengths and a resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·22 cites·19 claims
- 1397US10236215B1Methods of forming gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 19, 2019·22 cites·19 claims
- 1497US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 1597US10170473B1Forming long channel FinFET with short channel vertical FinFET and related integrated circuitGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 1, 2019·20 cites·9 claims
- 1697US10109637B1Cross couple structure for vertical transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 23, 2018·20 cites·20 claims
- 1797US10090169B1Methods of forming integrated circuit structures including opening filled with insulator in metal gateGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 2, 2018·18 cites·19 claims
- 1897US9935104B1Fin-type field effect transistors with single-diffusion breaks and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 3, 2018·16 cites·14 claims
- 1997US9911736B1Method of forming field effect transistors with replacement metal gates and contacts and resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 6, 2018·86 cites·15 claims
- 2097US9805982B1Apparatus and method of adjusting work-function metal thickness to provide variable threshold voltages in finFETsGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 31, 2017·19 cites·17 claims
- 2197US9324713B1Eliminating field oxide loss prior to FinFET source/drain epitaxial growthGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 26, 2016·32 cites·13 claims
- 2297US9276064B1Fabricating stacked nanowire, field-effect transistorsGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 1, 2016·68 cites·20 claims
- 2397US9112032B1Methods of forming replacement gate structures on semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 18, 2015·29 cites·15 claims
- 2496US11923248B2Single diffusion cut for gate structuresGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
- 2596US10410933B2Replacement metal gate patterning for nanosheet devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 10, 2019·17 cites·18 claims
- 2696US10373877B1Methods of forming source/drain contact structures on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·18 cites·20 claims
- 2796US10211206B1Two-port vertical SRAM circuit structure and method for producing the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 19, 2019·17 cites·18 claims
- 2896US10177037B2Methods of forming a CT pillar between gate structures in a semiconductorGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 8, 2019·15 cites·15 claims
- 2996US10170377B1Memory cell with recessed source/drain contacts to reduce capacitanceGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 1, 2019·13 cites·16 claims
- 3096US10164006B1LDMOS FinFET structures with trench isolation in the drain extensionGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·17 cites·20 claims
- 3196US10164041B1Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed therebyGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·14 cites·13 claims
- 3296US10134739B1Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory arrayGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 20, 2018·21 cites·18 claims
- 3396US10083971B1Vertical SRAM structure with cross-coupling contacts penetrating through common gates to bottom S/D metal contactsGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·14 cites·15 claims
- 3496US10068987B1Vertical field effect transistor (VFET) having a self-aligned gate/gate extension structure and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·13 cites·20 claims
- 3596US9831317B1Buried contact structures for a vertical field-effect transistorGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 28, 2017·18 cites·10 claims
- 3696US9741615B1Contacts for a fin-type field-effect transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 22, 2017·15 cites·9 claims
- 3796US9590074B1Method to prevent lateral epitaxial growth in semiconductor devicesIBM·Filed 2015·Granted Mar 7, 2017·11 cites·7 claims
- 3896US9564440B2Spacer chamfering gate stack schemeIBM·Filed 2016·Granted Feb 7, 2017·9 cites·20 claims
- 3996US9536991B1Single diffusion break structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 3, 2017·19 cites·10 claims
- 4096US8559926B1Telecom-fraud detection using device-location informationZANG HUI·Filed 2011·Granted Oct 15, 2013·28 cites·18 claims
- 4195US10475791B1Transistor fins with different thickness gate dielectricGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 12, 2019·12 cites·13 claims
- 4295US10326002B1Self-aligned gate contact and cross-coupling contact formationGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 18, 2019·11 cites·11 claims
- 4395US10263122B1Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a vertical field effect transistorGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 16, 2019·14 cites·10 claims
- 4495US10211315B2Vertical field-effect transistor having a dielectric spacer between a gate electrode edge and a self-aligned source/drain contactGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 19, 2019·11 cites·7 claims
- 4595US10163915B1Vertical SRAM structureGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·11 cites·15 claims
- 4695US9773680B1Advanced method for scaled SRAM with flexible active pitchGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 26, 2017·12 cites·13 claims
- 4795US9543298B1Single diffusion break structure and cuts later method of makingGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 10, 2017·14 cites·10 claims
- 4895US9478625B1Metal resistor using FinFET-based replacement gate processGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 25, 2016·13 cites·20 claims
- 4995US7796551B1Parallel adaptive quantile wireless schedulerSPRINT COMMUNICATIONS CO·Filed 2007·Granted Sep 14, 2010·53 cites·14 claims
- 5094US10825741B2Methods of forming single diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting productsGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 3, 2020·9 cites·20 claims
Showing the top 50 of 446 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →