Inventor · disambiguated record
Huilong Zhu
Also filed as: ZHU HUILONG
540 granted patents·155 pending applications·4,831 citations·filing 2003–2024
99Inventor score
Top patents by PatentIndex Score
695 records- 0199US8841777B2Bonded structure employing metal semiconductor alloy bondingFAROOQ MUKTA G·Filed 2010·Granted Sep 23, 2014·216 cites·16 claims
- 0299US8158515B2Method of making 3D integrated circuitsFAROOQ MUKTA G·Filed 2010·Granted Apr 17, 2012·281 cites·14 claims
- 0399US7981751B2Structure and method for fabricating self-aligned metal contactsIBM·Filed 2009·Granted Jul 19, 2011·523 cites·5 claims
- 0499US7456636B2Test structures and method of defect detection using voltage contrast inspectionIBM·Filed 2006·Granted Nov 25, 2008·95 cites·11 claims
- 0598US11081484B2IC unit and method of manufacturing the same, and electronic device including the sameINST OF MICROELECTRONICS CAS·Filed 2020·Granted Aug 3, 2021·9 cites·31 claims
- 0698US8835316B2Transistor with primary and semiconductor spacer, method for manufacturing transistor, and semiconductor chip comprising the transistorYIN HAIZHOU·Filed 2011·Granted Sep 16, 2014·77 cites·9 claims
- 0798US7723750B2MOSFET with super-steep retrograded islandIBM·Filed 2007·Granted May 25, 2010·124 cites·15 claims
- 0898US7704844B2High performance MOSFETIBM·Filed 2007·Granted Apr 27, 2010·126 cites·1 claims
- 0998US7544994B2Semiconductor structure with multiple fins having different channel region heights and method of forming the semiconductor structureIBM·Filed 2006·Granted Jun 9, 2009·61 cites·21 claims
- 1098US7224033B2Structure and method for manufacturing strained FINFETIBM·Filed 2005·Granted May 29, 2007·110 cites·9 claims
- 1198US7015082B2High mobility CMOS circuitsIBM·Filed 2003·Granted Mar 21, 2006·159 cites·12 claims
- 1298US6881635B1Strained silicon NMOS devices with embedded source/drainIBM·Filed 2004·Granted Apr 19, 2005·176 cites·13 claims
- 1397US8299583B2Two-sided semiconductor structureZHU HUILONG·Filed 2010·Granted Oct 30, 2012·30 cites·20 claims
- 1497US7655989B2Triple gate and double gate finFETs with different vertical dimension finsIBM·Filed 2006·Granted Feb 2, 2010·75 cites·18 claims
- 1597US7564081B2finFET structure with multiply stressed gate electrodeIBM·Filed 2005·Granted Jul 21, 2009·49 cites·9 claims
- 1697US7247547B2Method of fabricating a field effect transistor having improved junctionsIBM·Filed 2005·Granted Jul 24, 2007·57 cites·13 claims
- 1796US11677001B2Semiconductor device with c-shaped channel portion, method of manufacturing the same, and electronic apparatus including the sameINST OF MICROELECTRONICS CAS·Filed 2021·Granted Jun 13, 2023·3 cites·38 claims
- 1896US10714398B2Semiconductor device, method of manufacturing the same and electronic device including the deviceINST OF MICROELECTRONICS CAS·Filed 2017·Granted Jul 14, 2020·7 cites·24 claims
- 1996US7781273B2Semiconductor structure with multiple fins having different channel region heights and method of forming the semiconductor structureIBM·Filed 2008·Granted Aug 24, 2010·34 cites·3 claims
- 2096US7485520B2Method of manufacturing a body-contacted finfetIBM·Filed 2007·Granted Feb 3, 2009·55 cites·1 claims
- 2195US11127783B2MRAM, method of manufacturing the same, and electronic device including the MRAMINST OF MICROELECTRONICS CAS·Filed 2018·Granted Sep 21, 2021·7 cites·34 claims
- 2295US10475935B2Nanometer semiconductor devices having high-quality epitaxial layerINST OF MICROELECTRONICS CAS·Filed 2016·Granted Nov 12, 2019·12 cites·15 claims
- 2395US7910413B2Structure and method of fabricating FinFET with buried channelIBM·Filed 2007·Granted Mar 22, 2011·28 cites·19 claims
- 2495US7893529B2Thermoelectric 3D coolingIBM·Filed 2009·Granted Feb 22, 2011·34 cites·12 claims
- 2595US7737501B2FinFET SRAM with asymmetric gate and method of manufacture thereofIBM·Filed 2007·Granted Jun 15, 2010·33 cites·15 claims
- 2695US7288451B2Method and structure for forming self-aligned, dual stress liner for CMOS devicesIBM·Filed 2005·Granted Oct 30, 2007·32 cites·13 claims
- 2795US6972461B1Channel MOSFET with strained silicon channel on strained SiGeIBM·Filed 2004·Granted Dec 6, 2005·97 cites·16 claims
- 2894US11810902B2Semiconductor device with sidewall interconnection structure, method of manufacturing the same, and electronic apparatusINST OF MICROELECTRONICS CAS·Filed 2021·Granted Nov 7, 2023·2 cites·29 claims
- 2994US11749650B2Semiconductor device with sidewall interconnection structure, method of manufacturing the same, and electronic apparatusINST OF MICROELECTRONICS CAS·Filed 2021·Granted Sep 5, 2023·2 cites·17 claims
- 3094US10629498B2IC unit and methond of manufacturing the same, and electronic device including the sameINST OF MICROELECTRONICS CAS·Filed 2017·Granted Apr 21, 2020·7 cites·21 claims
- 3194US8674449B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Mar 18, 2014·19 cites·13 claims
- 3294US7612270B1Nanoelectromechanical digital inverterIBM·Filed 2008·Granted Nov 3, 2009·25 cites·20 claims
- 3394US7314802B2Structure and method for manufacturing strained FINFETIBM·Filed 2007·Granted Jan 1, 2008·27 cites·18 claims
- 3494US6939751B2Method and manufacture of thin silicon on insulator (SOI) with recessed channelIBM·Filed 2003·Granted Sep 6, 2005·98 cites·19 claims
- 3593US10643905B2IC unit and method of manufacturing the same, and electronic device including the sameINST OF MICROELECTRONICS CAS·Filed 2019·Granted May 5, 2020·5 cites·10 claims
- 3693US9583621B2Semiconductor device and method of manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2015·Granted Feb 28, 2017·9 cites·6 claims
- 3793US9087691B2Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jul 21, 2015·14 cites·11 claims
- 3893US8450813B2Fin transistor structure and method of fabricating the sameLUO ZHIJIONG·Filed 2010·Granted May 28, 2013·17 cites·20 claims
- 3993US8207027B2Triple gate and double gate finFETs with different vertical dimension finsZHU HUILONG·Filed 2009·Granted Jun 26, 2012·21 cites·12 claims
- 4093US8110465B2Field effect transistor having an asymmetric gate electrodeZHU HUILONG·Filed 2007·Granted Feb 7, 2012·19 cites·15 claims
- 4193US7439110B2Strained HOT (hybrid orientation technology) MOSFETsIBM·Filed 2006·Granted Oct 21, 2008·20 cites·15 claims
- 4293US7413961B2Method of fabricating a transistor structureCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Aug 19, 2008·22 cites·22 claims
- 4393US7348225B2Structure and method of fabricating FINFET with buried channelIBM·Filed 2005·Granted Mar 25, 2008·22 cites·15 claims
- 4493US7183613B1Method and structure for enhancing both NMOSFET and PMOSFET performance with a stressed filmIBM·Filed 2005·Granted Feb 27, 2007·22 cites·2 claims
- 4592US11532743B2Semiconductor device with U-shaped channel and manufacturing method thereof, and electronic apparatus including the sameINST OF MICROELECTRONICS CAS·Filed 2020·Granted Dec 20, 2022·2 cites·37 claims
- 4692US8803208B2Method for fabricating contact electrode and semiconductor deviceZHU HUILONG·Filed 2011·Granted Aug 12, 2014·13 cites·8 claims
- 4792US8748288B2Bonded structure with enhanced adhesion strengthFAROOQ MUKTA G·Filed 2010·Granted Jun 10, 2014·12 cites·12 claims
- 4892US8030113B2Thermoelectric 3D coolingIBM·Filed 2011·Granted Oct 4, 2011·12 cites·6 claims
- 4992US7800152B2Methods for manufacturing a finfet using a conventional wafer and apparatus manufactured therefromIBM·Filed 2007·Granted Sep 21, 2010·19 cites·14 claims
- 5092US7091566B2Dual gate FinFetIBM·Filed 2003·Granted Aug 15, 2006·69 cites·31 claims
Showing the top 50 of 695 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →