Inventor · disambiguated record
Hwa-Sook Shin
Also filed as: SHIN HWA-SOOK
17 granted patents·1 pending application·188 citations·filing 1997–2012
94Inventor score
Top patents by PatentIndex Score
18 records- 0186US6927452B2Semiconductor device having dual isolation structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·36 cites·25 claims
- 0285US6773995B2Double diffused MOS transistor and method for manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 10, 2004·32 cites·19 claims
- 0384US7297604B2Semiconductor device having dual isolation structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 20, 2007·11 cites·17 claims
- 0477US8749022B2Capacitor device and method of fabricating the sameCHANG DONG-RYUL·Filed 2011·Granted Jun 10, 2014·5 cites·61 claims
- 0574US7211515B2Methods of forming silicide layers on source/drain regions of MOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 1, 2007·16 cites·28 claims
- 0674US6635536B2Method for manufacturing semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 21, 2003·22 cites·7 claims
- 0773US6815794B2Semiconductor devices with multiple isolation structure and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·21 cites·25 claims
- 0867US7446387B2High voltage transistor and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 4, 2008·4 cites·38 claims
- 0964US9117655B2Semiconductor deviceCHANG DONG-RYUL·Filed 2012·Granted Aug 25, 2015·2 cites·20 claims
- 1063US7517752B2Method of fabricating semiconductor device having storage capacitor and higher voltage resistance capacitor and semiconductor device fabricated using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·2 cites·17 claims
- 1152US8507967B2Method of fabricating semiconductor device having storage capacitor and higher voltage resistance capacitor and semiconductor device fabricated using the sameSHIN HWA-SOOK·Filed 2009·Granted Aug 13, 2013·1 cites·12 claims
- 1252US6924530B2Double diffused MOS transistor and method for manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 2, 2005·4 cites·10 claims
- 1352US6159811AMethods for patterning microelectronic structures using chlorine, oxygen, and fluorineSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 12, 2000·14 cites·27 claims
- 1447US2007170501A1MOS Transistors Including Silicide Layers on Source/Drain RegionsLEE YOUNG-KI·Filed 2007·Application pending·0 cites
- 1539US6187686B1Methods for forming patterned platinum layers using masking layers including titanium and related structuresSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 13, 2001·7 cites·9 claims
- 1638US6087264AMethods for patterning microelectronic structures using chlorine and oxygenSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 11, 2000·6 cites·10 claims
- 1736US5914276AMethods of forming electrically conductive lines using nitrogen and chlorine containing gas mixturesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jun 22, 1999·5 cites·6 claims
- 1835US8760192B2Programmable circuit including differential amplifier circuitCHANG DONG-RYUL·Filed 2012·Granted Jun 24, 2014·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →