Inventor · disambiguated record
Hyoung-Chan Ha
Also filed as: HA HYOUNG C · HA HYOUNG-CHAN
13 granted patents·7 pending applications·302 citations·filing 1993–2015
93Inventor score
Top patents by PatentIndex Score
20 records- 0195US5563077AMethod of fabricating a thin film transistor having vertical channelHYUNDAI ELECTRONICS IND·Filed 1995·Granted Oct 8, 1996·167 cites·4 claims
- 0292US8187970B2Process for forming cobalt and cobalt silicide materials in tungsten contact applicationsGANGULI SESHADRI·Filed 2010·Granted May 29, 2012·12 cites·9 claims
- 0391US8563424B2Process for forming cobalt and cobalt silicide materials in tungsten contact applicationsGANGULI SESHADRI·Filed 2012·Granted Oct 22, 2013·10 cites·20 claims
- 0490US8637390B2Metal gate structures and methods for forming thereofGANGULI SESHADRI·Filed 2011·Granted Jan 28, 2014·12 cites·13 claims
- 0589US9209074B2Cobalt deposition on barrier surfacesAPPLIED MATERIALS INC·Filed 2015·Granted Dec 8, 2015·5 cites·20 claims
- 0689US7867578B2Method for depositing an amorphous carbon film with improved density and step coverageAPPLIED MATERIALS INC·Filed 2006·Granted Jan 11, 2011·12 cites·14 claims
- 0788US9129945B2Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performanceLEE SANG-HYEOB·Filed 2010·Granted Sep 8, 2015·10 cites·14 claims
- 0884US9051641B2Cobalt deposition on barrier surfacesLU JIANG·Filed 2008·Granted Jun 9, 2015·8 cites·25 claims
- 0967US5508531AThin film transistor (TFT) and method of manufacturing thereofHYUNDAI ELECTRONICS IND·Filed 1995·Granted Apr 16, 1996·23 cites·3 claims
- 1055US2009004850A1Process for forming cobalt and cobalt silicide materials in tungsten contact applicationsGANGULI SESHADRI·Filed 2008·Application pending·0 cites
- 1152US5366910AProcess for the production of thin film transistors using on SOG filmHYUNDAI ELECTRONICS IND·Filed 1993·Granted Nov 22, 1994·23 cites·11 claims
- 1251US2013146468A1Chemical vapor deposition (cvd) of ruthenium films and applications for sameKIM HOON·Filed 2011·Application pending·0 cites
- 1346US2012208373A1Method for depositing an amorphous carbon film with improved density and step coveragePADHI DEENESH·Filed 2012·Application pending·0 cites
- 1444US2011104400A1Method for depositing an amorphous carbon film with improved density and step coveragePADHI DEENESH·Filed 2011·Application pending·0 cites
- 1542US5554547AProcess for the production of thin film transistor using oxygen plasmaHYUNDAI ELECTRONICS IND·Filed 1995·Granted Sep 10, 1996·8 cites·2 claims
- 1642US2008153311A1Method for depositing an amorphous carbon film with improved density and step coveragePADHI DEENESH·Filed 2008·Application pending·0 cites
- 1741US9926639B2Methods for forming barrier/seed layers for copper interconnect structuresKIM HOON·Filed 2011·Granted Mar 27, 2018·0 cites·11 claims
- 1841US5401685AMethod for hydrogenating thin film transistor by using a spin-on-glass filmHYUNDAI ELECTRONICS IND·Filed 1993·Granted Mar 28, 1995·12 cites·1 claims
- 1938US2011312148A1Chemical vapor deposition of ruthenium films containing oxygen or carbonKIM HOON·Filed 2011·Application pending·0 cites
- 2036US2003072884A1Method of titanium and titanium nitride layer depositionAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →