Inventor · disambiguated record
Hyung-Suk Jung
Also filed as: JUNG HYUNG-SUK
40 granted patents·17 pending applications·328 citations·filing 2003–2024
97Inventor score
Top patents by PatentIndex Score
57 records- 0197US7651729B2Method of fabricating metal silicate layer using atomic layer deposition techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 26, 2010·61 cites·41 claims
- 0296US11728372B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·2 cites·18 claims
- 0395US7547951B2Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 16, 2009·36 cites·15 claims
- 0492US11322578B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 3, 2022·5 cites·20 claims
- 0591US11043553B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 22, 2021·6 cites·20 claims
- 0690US10978552B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 13, 2021·5 cites·20 claims
- 0790US10559687B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·7 cites·20 claims
- 0890US9318335B2Method for fabricating semiconductor device including nitrided gate insulatorKIM WEON-HONG·Filed 2015·Granted Apr 19, 2016·9 cites·19 claims
- 0990US7952118B2Semiconductor device having different metal gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 31, 2011·14 cites·8 claims
- 1090US7494940B2Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·16 cites·23 claims
- 1188US10991574B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 27, 2021·3 cites·14 claims
- 1288US7829953B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 9, 2010·13 cites·11 claims
- 1386US7919820B2CMOS semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 5, 2011·16 cites·20 claims
- 1485US7586159B2Semiconductor devices having different gate dielectrics and methods for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·13 cites·16 claims
- 1585US7576395B2Dual gate stack CMOS structure with different dielectricsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 18, 2009·11 cites·11 claims
- 1685US7396777B2Method of fabricating high-k dielectric layer having reduced impuritySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 8, 2008·10 cites·32 claims
- 1785US6875678B2Post thermal treatment methods of forming high dielectric layers in integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 5, 2005·32 cites·29 claims
- 1884US9035398B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 19, 2015·8 cites·19 claims
- 1981US12125872B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·16 claims
- 2081US9218977B2Fabricating method of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 22, 2015·5 cites·18 claims
- 2180US10529817B2Semiconductor devices having multi-threshold voltageSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
- 2279US12074023B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 2377US7615830B2Transistors with multilayered dielectric filmsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 10, 2009·5 cites·16 claims
- 2476US7514310B2Dual work function metal gate structure and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 7, 2009·7 cites·40 claims
- 2575US7037863B2Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 2, 2006·15 cites·14 claims
- 2674US9034714B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 19, 2015·3 cites·20 claims
- 2774US8115262B2Dielectric multilayer structures of microelectronic devices and methods for fabricating the sameKIM JONG-PYO·Filed 2009·Granted Feb 14, 2012·6 cites·15 claims
- 2874US7588989B2Dielectric multilayer structures of microelectronic devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 15, 2009·5 cites·15 claims
- 2974US7323419B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 29, 2008·4 cites·21 claims
- 3073US7745887B2Dual work function metal gate structure and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·4 cites·22 claims
- 3171US8013402B2Transistors with multilayered dielectric filmsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·3 cites·20 claims
- 3270US11682555B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·13 claims
- 3367US10566433B2Semiconductor devices having transistors with different work function layersSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 18, 2020·1 cites·14 claims
- 3463US11588012B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·20 claims
- 3562US2025016978A1Capacitor structure and semiconductor memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3661US11929389B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 12, 2024·0 cites·13 claims
- 3757US8557713B2Semiconductor devices and method of forming the sameLIM HA-JIN·Filed 2009·Granted Oct 15, 2013·0 cites·19 claims
- 3856US8970014B2Semiconductor devices with dielectric layersSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 3, 2015·0 cites·15 claims
- 3951US8252674B2Transistors with multilayered dielectric films and methods of manufacturing such transistorsLIM HA-JIN·Filed 2011·Granted Aug 28, 2012·0 cites·27 claims
- 4049US2023061185A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4147US2011193181A1Semiconductor device having different metal gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2011·Application pending·0 cites
- 4246US2007178634A1Cmos semiconductor devices having dual work function metal gate stacksJUNG HYUNG SUK·Filed 2006·Application pending·0 cites
- 4345US9793399B2Semiconductor device having insulating pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 17, 2017·0 cites·20 claims
- 4445US2008079086A1Semiconductor device and method of manufacturing the sameJUNG HYUNG-SUK·Filed 2007·Application pending·0 cites
- 4545US2015162201A1Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 4644US7767512B2Methods of manufacturing a semiconductor device including CMOS transistor having different PMOS and NMOS gate electrode structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 3, 2010·0 cites·12 claims
- 4744US2009163016A1Method of fabricating a semiconductor device including metal gate electrode and electronic fuseSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4841US2007178637A1Method of fabricating gate of semiconductor device using oxygen-free ashing processSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4941US2007200160A1Semiconductor device and method of fabricating the sameJUNG HYUNG-SUK·Filed 2007·Application pending·0 cites
- 5039US2007023842A1Semiconductor devices having different gate dielectric layers and methods of manufacturing the sameJUNG HYUNG-SUK·Filed 2006·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Hyung-Suk Jung files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →