Inventor · disambiguated record
Hyun-Jo Kim
Also filed as: KIM HYUN-JO
42 granted patents·7 pending applications·625 citations·filing 2003–2021
98Inventor score
Top patents by PatentIndex Score
49 records- 0198US8878309B1Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 4, 2014·105 cites·25 claims
- 0298US7351594B2Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 1, 2008·102 cites·29 claims
- 0397US7495984B2Resistive memory devices including selected reference memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·54 cites·15 claims
- 0497US7352021B2Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 1, 2008·96 cites·14 claims
- 0594US9673330B2Integrated circuit devices and methods of manufacturing the sameCHUNG JAE-YUP·Filed 2015·Granted Jun 6, 2017·12 cites·20 claims
- 0694US9379106B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 28, 2016·18 cites·22 claims
- 0791US9922979B2Integrated circuit device and method of manufacturing the sameCHUNG JAE YUP·Filed 2016·Granted Mar 20, 2018·12 cites·20 claims
- 0891US7672155B2Resistive memory devices including selected reference memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 2, 2010·23 cites·4 claims
- 0989US10153270B2Electrostatic discharge protection devicesKANG DAE LIM·Filed 2015·Granted Dec 11, 2018·9 cites·20 claims
- 1089US10032886B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 24, 2018·8 cites·11 claims
- 1189US9679896B2Moisture blocking structure and/or a guard ring, a semiconductor device including the same, and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 13, 2017·15 cites·20 claims
- 1289US7378698B2Magnetic tunnel junction and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 27, 2008·51 cites·8 claims
- 1387US10854452B2Method of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 1, 2020·4 cites·19 claims
- 1486US11011511B2Electrostatic discharge protection devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 18, 2021·3 cites·17 claims
- 1586US9299811B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 29, 2016·7 cites·12 claims
- 1685US10002943B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 19, 2018·4 cites·20 claims
- 1783US10269928B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·8 claims
- 1883US8345467B2Resistive memory devices including selected reference memory cells operating responsive to read operationsSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·6 cites·7 claims
- 1982US6952364B2Magnetic tunnel junction structures and methods of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 4, 2005·30 cites·22 claims
- 2077US10074572B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 11, 2018·2 cites·13 claims
- 2177US8023311B2Resistive memory devices including selected reference memory cells operating responsive to read operationsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·7 cites·8 claims
- 2276US7218556B2Method of writing to MRAM devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 15, 2007·10 cites·20 claims
- 2374US7612969B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 3, 2009·6 cites·1 claims
- 2473US11626396B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 2573US8035145B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 11, 2011·2 cites·19 claims
- 2673US7645619B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 12, 2010·5 cites·19 claims
- 2773US7141438B2Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·17 cites·16 claims
- 2870US12074157B2Electrostatic discharge protection devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·10 claims
- 2970US7582890B2Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·34 claims
- 3069US11152349B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 19, 2021·0 cites·19 claims
- 3169US11145640B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 12, 2021·0 cites·20 claims
- 3268US7504266B2Magnetic tunnel junction structures and methods of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 17, 2009·2 cites·6 claims
- 3362US10714467B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 14, 2020·0 cites·20 claims
- 3462US7372090B2Magnetic random access memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 13, 2008·2 cites·12 claims
- 3558US10618605B2Semi-submersible maritime structureSAMSUNG HEAVY IND·Filed 2016·Granted Apr 14, 2020·1 cites·8 claims
- 3658US6838727B2Memory device using a transistor and one resistant element for storageSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 4, 2005·5 cites·30 claims
- 3756US11183496B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·20 claims
- 3850US10276567B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 30, 2019·0 cites·20 claims
- 3950US2012207736A1Composition for cartilaginous tissue repair and a production method thereforJANG CHEONG-HO·Filed 2009·Application pending·0 cites
- 4049US7732222B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 8, 2010·0 cites·16 claims
- 4146US10109629B2Semiconductor devices including gate structures with oxygen capturing filmsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 23, 2018·0 cites·15 claims
- 4246US9397234B2Pumping capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 19, 2016·0 cites·25 claims
- 4344US7009868B2Memory device having a transistor and one resistant element as a storing means and method for driving the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 7, 2006·1 cites·16 claims
- 4441US2007230242A1Methods of Forming Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and SubstratesLEE JANG E·Filed 2007·Application pending·0 cites
- 4540US2007206411A1Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates and Related MethodsLEE JANG E·Filed 2007·Application pending·0 cites
- 4639US2007103964A1Resistive memory devices including selected reference memory cells and methods of operating the sameKIM HYUN-JO·Filed 2006·Application pending·0 cites
- 4739US2007041125A1Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4836US2006027846A1Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methodsLEE JANG-EUN·Filed 2005·Application pending·0 cites
- 4935US2016079241A1Integrated circuit device including blocking insulating layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →