Inventor · disambiguated record
Hyman J. Levinstein
Also filed as: LEVINSTEIN HYMAN · LEVINSTEIN HYMAN J · LEVINSTEIN HYMAN JOSEPH
34 granted patents·1,861 citations·filing 1974–1998
98Inventor score
Files withBELL TELEPHONE LABOR INC18APPLIED MATERIALS INC10AT & T BELL LAB4AMERICAN TELEPHONE & TELEGRAPH1HENDEL RUDI1
Top patents by PatentIndex Score
34 records- 0197US5903428AHybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating sameAPPLIED MATERIALS INC·Filed 1997·Granted May 11, 1999·300 cites·19 claims
- 0296US4378628ACobalt silicide metallization for semiconductor integrated circuitsBELL TELEPHONE LABOR INC·Filed 1981·Granted Apr 5, 1983·105 cites·22 claims
- 0395US5745331AElectrostatic chuck with conformal insulator filmAPPLIED MATERIALS INC·Filed 1995·Granted Apr 28, 1998·166 cites·42 claims
- 0491US4427516AApparatus and method for plasma-assisted etching of wafersBELL TELEPHONE LABOR INC·Filed 1983·Granted Jan 24, 1984·82 cites·14 claims
- 0591US4276557AIntegrated semiconductor circuit structure and method for making itBELL TELEPHONE LABOR INC·Filed 1978·Granted Jun 30, 1981·59 cites·7 claims
- 0690US4256534ADevice fabrication by plasma etchingBELL TELEPHONE LABOR INC·Filed 1978·Granted Mar 17, 1981·57 cites·11 claims
- 0789US4555842AMethod of fabricating VLSI CMOS devices having complementary threshold voltagesAT & T BELL LAB·Filed 1984·Granted Dec 3, 1985·49 cites·25 claims
- 0889US4151007AHydrogen annealing process for stabilizing metal-oxide-semiconductor structuresBELL TELEPHONE LABOR INC·Filed 1977·Granted Apr 24, 1979·51 cites·11 claims
- 0988US5753132AMethod of making electrostatic chuck with conformal insulator filmAPPLIED MATERIALS INC·Filed 1996·Granted May 19, 1998·78 cites·34 claims
- 1088US4208241ADevice fabrication by plasma etchingBELL TELEPHONE LABOR INC·Filed 1978·Granted Jun 17, 1980·59 cites·26 claims
- 1187US4011583AOhmics contacts of germanium and palladium alloy from group III-V n-type semiconductorsBELL TELEPHONE LABOR INC·Filed 1976·Granted Mar 8, 1977·31 cites·6 claims
- 1286US4033287ARadial flow reactor including glow discharge limiting shieldBELL TELEPHONE LABOR INC·Filed 1976·Granted Jul 5, 1977·42 cites·5 claims
- 1384US4419201AApparatus and method for plasma-assisted etching of wafersBELL TELEPHONE LABOR INC·Filed 1981·Granted Dec 6, 1983·55 cites·8 claims
- 1482US5729423APuncture resistant electrostatic chuckAPPLIED MATERIALS INC·Filed 1996·Granted Mar 17, 1998·57 cites·45 claims
- 1582US5491603AMethod of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a waferAPPLIED MATERIALS INC·Filed 1994·Granted Feb 13, 1996·77 cites·61 claims
- 1682US4343677AMethod for patterning films using reactive ion etching thereofBELL TELEPHONE LABOR INC·Filed 1981·Granted Aug 10, 1982·58 cites·22 claims
- 1782US4171489ARadiation mask structureBELL TELEPHONE LABOR INC·Filed 1978·Granted Oct 16, 1979·27 cites·18 claims
- 1881US4149905AMethod of limiting stacking faults in oxidized silicon wafersBELL TELEPHONE LABOR INC·Filed 1977·Granted Apr 17, 1979·35 cites·2 claims
- 1981US3965279AOhmic contacts for group III-V n-type semiconductorsBELL TELEPHONE LABOR INC·Filed 1974·Granted Jun 22, 1976·24 cites·15 claims
- 2079US4332839AMethod for making integrated semiconductor circuit structure with formation of Ti or Ta silicideBELL TELEPHONE LABOR INC·Filed 1981·Granted Jun 1, 1982·30 cites·3 claims
- 2179US4134125APassivation of metallized semiconductor substratesBELL TELEPHONE LABOR INC·Filed 1977·Granted Jan 9, 1979·36 cites·2 claims
- 2278US4472237AReactive ion etching of tantalum and siliconAT & T BELL LAB·Filed 1982·Granted Sep 18, 1984·30 cites·19 claims
- 2377US5986875APuncture resistant electrostatic chuckAPPLIED MATERIALS INC·Filed 1998·Granted Nov 16, 1999·42 cites·32 claims
- 2476US6110821AMethod for forming titanium silicide in situAPPLIED MATERIALS INC·Filed 1998·Granted Aug 29, 2000·37 cites·12 claims
- 2574US5360524AMethod for planarization of submicron vias and the manufacture of semiconductor integrated circuitsHENDEL RUDI·Filed 1993·Granted Nov 1, 1994·77 cites·13 claims
- 2673US5585012ASelf-cleaning polymer-free top electrode for parallel electrode etch operationAPPLIED MATERIALS INC·Filed 1994·Granted Dec 17, 1996·52 cites·9 claims
- 2771US4253029AMask structure for x-ray lithographyBELL TELEPHONE LABOR INC·Filed 1979·Granted Feb 24, 1981·18 cites·12 claims
- 2863US4522842ABoron nitride X-ray masks with controlled stressAT & T BELL LAB·Filed 1982·Granted Jun 11, 1985·16 cites·20 claims
- 2963US4341818AMethod for producing silicon dioxide/polycrystalline silicon interfacesBELL TELEPHONE LABOR INC·Filed 1980·Granted Jul 27, 1982·25 cites·9 claims
- 3060US6217655B1Stand-off pad for supporting a wafer on a substrate support chuckAPPLIED MATERIALS INC·Filed 1997·Granted Apr 17, 2001·23 cites·11 claims
- 3158US4937643ADevices having tantalum silicide structuresAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted Jun 26, 1990·18 cites·1 claims
- 3251US4323638AReducing charging effects in charged-particle-beam lithographyBELL TELEPHONE LABOR INC·Filed 1980·Granted Apr 6, 1982·17 cites·15 claims
- 3348US6184150B1Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topographyAPPLIED MATERIALS INC·Filed 1997·Granted Feb 6, 2001·14 cites·13 claims
- 3442US4985373AMultiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structuresAT & T BELL LAB·Filed 1989·Granted Jan 15, 1991·14 cites·11 claims
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