Inventor · disambiguated record
Hyung-Moo Park
Also filed as: PARK HYUNG J · PARK HYUNG M · PARK HYUNG SOON · PARK HYUNG-MOO
23 granted patents·8 pending applications·489 citations·filing 1989–2010
96Inventor score
Files withKOREA ELECTRONICS TELECOMM12SAMSUNG ELECTRONICS CO LTD11ELECTRONICS TELECOMM RES INST1KWAK KUN-HO1LEE JAE-HYUN1
Top patents by PatentIndex Score
31 records- 0192US6541328B2Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regionsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 1, 2003·125 cites·25 claims
- 0280US5472889AMethod of manufacturing large-sized thin film transistor liquid crystal display panelKOREA ELECTRONICS TELECOMM·Filed 1992·Granted Dec 5, 1995·52 cites·2 claims
- 0376US7629222B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 8, 2009·7 cites·17 claims
- 0474US7091567B2Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·16 cites·10 claims
- 0572US6214676B1Embedded memory logic device using self-aligned silicide and manufacturing method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 10, 2001·13 cites·15 claims
- 0672US5745857AGaas power amplifier for analog/digital dual-mode cellular phonesKOREA ELECTRONICS TELECOMM·Filed 1995·Granted Apr 28, 1998·36 cites·5 claims
- 0772US5393710AMethod for manufacturing a micro light valveKOREA ELECTRONICS TELECOMM·Filed 1993·Granted Feb 28, 1995·33 cites·16 claims
- 0870US5554434AMicro light valve and method for manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Sep 10, 1996·30 cites·10 claims
- 0968US7491619B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 17, 2009·4 cites·20 claims
- 1068US6043537AEmbedded memory logic device using self-aligned silicide and manufacturing method thereforSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Mar 28, 2000·23 cites·12 claims
- 1166US6391704B1Method for manufacturing an MDL semiconductor device including a DRAM device having self-aligned contact hole and a logic device having dual gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 21, 2002·19 cites·12 claims
- 1261US4929567AMethod of manufacturing a self-aligned GaAs MESFET with T type tungsten gateELECTRONICS TELECOMM RES INST·Filed 1989·Granted May 29, 1990·22 cites·4 claims
- 1359US6333242B1Method of fabricating semiconductor device without having grooves at edge portions of STISAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 25, 2001·9 cites·9 claims
- 1458US5760418AGaAs power semiconductor device operating at a low voltage and method for fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Jun 2, 1998·20 cites·8 claims
- 1552US7745255B2Bonding pad structure, electronic device having a bonding pad structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 29, 2010·0 cites·10 claims
- 1651US5446959AMethod of packaging a power semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Sep 5, 1995·17 cites·4 claims
- 1749US5612853APackage for a power semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 1995·Granted Mar 18, 1997·14 cites·3 claims
- 1847US5459428ASwitch circuit for monolithic microwave integrated circuit deviceKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Oct 17, 1995·10 cites·2 claims
- 1946US2006240632A1Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the samePARK HO-WOO·Filed 2006·Application pending·0 cites
- 2045US6677634B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 13, 2004·2 cites·9 claims
- 2144US2010208441A1Bonding pad structure, electronic device having a bonding pad structure and methods of fabricating the sameLEE JAE-HYUN·Filed 2010·Application pending·0 cites
- 2243US2005279995A1Composition for preparing organic insulating film and organic insulating film prepared from the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 2340US5639677AMethod of making a gaAs power semiconductor device operating at a low voltageKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Jun 17, 1997·7 cites·14 claims
- 2440US5338981ASemiconductor device having a decoding circuit for selection chipsKOREA ELECTRONICS TELECOMM·Filed 1992·Granted Aug 16, 1994·8 cites·5 claims
- 2539US5693548AMethod for making T-gate of field effect transistorKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Dec 2, 1997·13 cites·24 claims
- 2639US5642080ALow noise amplifier in monolithic integrated circuitKOREA ELECTRONICS TELECOMM·Filed 1995·Granted Jun 24, 1997·9 cites·1 claims
- 2738US2008093596A1Semiconductor Device and Method of Fabricating the SameSHIN JI-YOUNG·Filed 2007·Application pending·0 cites
- 2836US2004123528A1CMP slurry for semiconductor device, and method for manufacturing semiconductor device using the sameFiled 2003·Application pending·0 cites
- 2935US2011198706A1Semiconductor cell structure, semiconductor device including semiconductor cell structure, and semiconductor module including semiconductor deviceKWAK KUN-HO·Filed 2010·Application pending·0 cites
- 3035US2006006441A1Semiconductor device including a trench-type metal-insulator-metal (MIM) capacitor and method of fabricating the samePARK DUK-SEO·Filed 2005·Application pending·0 cites
- 3134US2007181914A1Non-volatile memory device and method of fabricating the sameUOM JUNG-SUP·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →