Inventor · disambiguated record
Hyoung Seub Rhie
Also filed as: RHIE HYOUNG SEUB
38 granted patents·6 pending applications·177 citations·filing 2006–2023
97Inventor score
Files withCONVERSANT INTELLECTUAL PROPERTY MAN INC26SAMSUNG ELECTRONICS CO LTD6MOSAID TECH INCORPORATED5CONVERSANT IP MAN INC2MOSAID TECHNOLOGIES INC2
Top patents by PatentIndex Score
44 records- 0197US9214235B2U-shaped common-body type cell stringCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2013·Granted Dec 15, 2015·16 cites·21 claims
- 0296US9236394B2Three dimensional nonvolatile memory cell structure with upper body connectionCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2014·Granted Jan 12, 2016·19 cites·21 claims
- 0394US9007834B2Nonvolatile memory with split substrate select gates and hierarchical bitline configurationMOSAID TECHNOLOGIES INC·Filed 2013·Granted Apr 14, 2015·18 cites·22 claims
- 0491US9893084B2U-shaped common-body type cell stringCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2017·Granted Feb 13, 2018·6 cites·10 claims
- 0591US9025382B2Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereofCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2013·Granted May 5, 2015·11 cites·16 claims
- 0690US9935110B2Memory device with manufacturable cylindrical storage nodeCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2017·Granted Apr 3, 2018·5 cites·10 claims
- 0789US7489003B2Semiconductor device having a channel extending verticallySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 10, 2009·12 cites·4 claims
- 0885US9595336B2Vertical gate stacked NAND and row decoder for erase operationCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2015·Granted Mar 14, 2017·6 cites·7 claims
- 0984US9704580B2Integrated erase voltage path for multiple cell substrates in nonvolatile memory devicesMOSAID TECH INCORPORATED·Filed 2013·Granted Jul 11, 2017·6 cites·16 claims
- 1084US9202578B2Vertical gate stacked NAND and row decoder for erase operationCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2013·Granted Dec 1, 2015·7 cites·21 claims
- 1184US7692950B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 6, 2010·11 cites·18 claims
- 1283US9595534B2U-shaped common-body type cell stringCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2015·Granted Mar 14, 2017·3 cites·9 claims
- 1383US9236127B2Nonvolatile semiconductor memory deviceCONVERSANT IP MAN INC·Filed 2014·Granted Jan 12, 2016·7 cites·12 claims
- 1483US8174865B2Memory devices and wireless devices including the sameRHIE HYOUNG-SEUB·Filed 2010·Granted May 8, 2012·12 cites·13 claims
- 1582US12119411B2NAND flash memory with vertical cell stack structure and method for manufacturing sameMOSAID TECH INCORPORATED·Filed 2023·Granted Oct 15, 2024·0 cites·17 claims
- 1682US11088289B2NAND flash memory with vertical cell stack structure and method for manufacturing sameMOSAID TECH INCORPORATED·Filed 2020·Granted Aug 10, 2021·1 cites·19 claims
- 1782US10403766B2NAND flash memory with vertical cell stack structure and method for manufacturing sameCONVERSANT INTELLECTUAL PROPERTY MAN INCORPORATED·Filed 2013·Granted Sep 3, 2019·5 cites·13 claims
- 1881US9202931B2Structure and method for manufacture of memory device with thin silicon bodyCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2013·Granted Dec 1, 2015·4 cites·9 claims
- 1978US10622488B2NAND flash memory with vertical cell stack structure and method for manufacturing sameCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2019·Granted Apr 14, 2020·2 cites·16 claims
- 2078US9343152B2Cell array with a manufacturable select gate for a nonvolatile semiconductor memory deviceCONVERSANT IP MAN INC·Filed 2014·Granted May 17, 2016·6 cites·17 claims
- 2176US11664463B2NAND flash memory with vertical cell stack structure and method for manufacturing sameMOSAID TECH INCORPORATED·Filed 2021·Granted May 30, 2023·0 cites·7 claims
- 2274USRE50124EThree-dimensional nonvolatile memory cell structureMOSAID TECH INCORPORATED·Filed 2021·Granted Sep 10, 2024·0 cites·34 claims
- 2374USRE47816EThree-dimensional nonvolatile memory cell structure with upper body connectionCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2018·Granted Jan 14, 2020·2 cites·26 claims
- 2474US7910435B2Method of manufacturing a semiconductor device having a channel extending verticallySAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 22, 2011·3 cites·6 claims
- 2571US8958244B2Split block decoder for a nonvolatile memory deviceMOSAID TECHNOLOGIES INC·Filed 2013·Granted Feb 17, 2015·3 cites·32 claims
- 2670USRE48766EThree-dimensional nonvolatile memory cell structure with upper body connectionCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2019·Granted Oct 5, 2021·1 cites·32 claims
- 2767US9030879B2Method and system for programming non-volatile memory with junctionless cellsCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2013·Granted May 12, 2015·3 cites·25 claims
- 2867US2021295923A1Integrated erase voltage path for multiple cell substrates in nonvolatile memory devicesCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2021·Application pending·0 cites
- 2964US9893076B2Access transistor of a nonvolatile memory device and method for fabricating sameCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2015·Granted Feb 13, 2018·1 cites·19 claims
- 3064US7494866B2Semiconductor device and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·4 cites·23 claims
- 3161US10074655B2Memory device with manufacturable cylindrical storage nodeCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2018·Granted Sep 11, 2018·0 cites·8 claims
- 3257US7965468B2Magnetic racetrack memory device including write-back loopSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 21, 2011·3 cites·18 claims
- 3356US9252205B2DRAM memory device with manufacturable capacitorCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2015·Granted Feb 2, 2016·0 cites·13 claims
- 3455US10998048B2Integrated erase voltage path for multiple cell substrates in nonvolatile memory devicesCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2019·Granted May 4, 2021·0 cites·17 claims
- 3555US9583496B2Memory device with manufacturable cylindrical storage nodeCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2016·Granted Feb 28, 2017·0 cites·18 claims
- 3650US10460807B2Integrated erase voltage path for multiple cell substrates in nonvolatile memory devicesCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2017·Granted Oct 29, 2019·0 cites·10 claims
- 3750US9318499B2Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereofCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2015·Granted Apr 19, 2016·0 cites·8 claims
- 3849US9343473B2Structure and method for manufacture of memory device with thin silicon bodyCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2015·Granted May 17, 2016·0 cites·19 claims
- 3944US9384838B2Split block decoder for a nonvolatile memory deviceCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2015·Granted Jul 5, 2016·0 cites·20 claims
- 4044US2015214239A1Three dimensional non-volatile memory with charge storage node isolationCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2014·Application pending·0 cites
- 4141US2015048434A1Structure and Method of Manufacturing a Stacked Memory Array for Junction-Free Cell TransistorsCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2013·Application pending·0 cites
- 4237US2009296461A1Memory Devices and Related Data Storage Devices and Systems Including the SameKANG SANG BEOM·Filed 2009·Application pending·0 cites
- 4336US2007195619A1Integrated circuit memory devices having multi-bit normal memory cells and single-bit redundant memory cells thereinSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4435US2016172027A1Polymer MemoryCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2014·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Hyoung Seub Rhie files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →