Inventor · disambiguated record
Hyung Sup Yoon
Also filed as: YOON HYUNG SUP
38 granted patents·13 pending applications·178 citations·filing 1996–2020
97Inventor score
Files withKOREA ELECTRONICS TELECOMM29ELECTRONICS & TELECOMMUNICATIONS RES INST12AHN HOKYUN2KIM SEONG-IL2YOON HYUNG SUP2
Top patents by PatentIndex Score
51 records- 0187US7986211B2InductorKOREA ELECTRONICS TELECOMM·Filed 2010·Granted Jul 26, 2011·9 cites·20 claims
- 0286US8841969B2Automatic gain control feedback amplifierKOREA ELECTRONICS TELECOMM·Filed 2012·Granted Sep 23, 2014·8 cites·9 claims
- 0383US8130041B2Power amplifier deviceKIM SEONG-IL·Filed 2010·Granted Mar 6, 2012·9 cites·10 claims
- 0482US9178474B2Feedback amplifierKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Nov 3, 2015·6 cites·10 claims
- 0580US8722474B2Semiconductor device including stepped gate electrode and fabrication method thereofYOON HYUNG SUP·Filed 2012·Granted May 13, 2014·6 cites·7 claims
- 0679US9899226B2Semiconductor device and fabrication method thereofELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2015·Granted Feb 20, 2018·3 cites·14 claims
- 0779US8901608B2Transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Dec 2, 2014·4 cites·20 claims
- 0879US8841154B2Method of manufacturing field effect type compound semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Sep 23, 2014·5 cites·8 claims
- 0976US9634112B2Field effect transistor and method of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2015·Granted Apr 25, 2017·2 cites·11 claims
- 1074US8338241B2Method of manufacturing high frequency device structureYOON HYUNG SUP·Filed 2011·Granted Dec 25, 2012·4 cites·13 claims
- 1173US9012920B2Wafer level packaged GaN power semiconductor device and the manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Apr 21, 2015·3 cites·17 claims
- 1273US8965009B2Speaker with built-in filter for digital amplifierNEOFIDELITY INC·Filed 2012·Granted Feb 24, 2015·5 cites·15 claims
- 1373US6204102B1Method of fabricating compound semiconductor devices using lift-off of insulating filmKOREA ELECTRONICS TELECOMM·Filed 1998·Granted Mar 20, 2001·35 cites·16 claims
- 1471US10608102B2Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2018·Granted Mar 31, 2020·1 cites·15 claims
- 1571US10256811B2Cascode switch circuit including level shifterELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2017·Granted Apr 9, 2019·2 cites·14 claims
- 1670US9159612B2Semiconductor device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Oct 13, 2015·2 cites·6 claims
- 1770US8053345B2Method for fabricating field effect transistor using a compound semiconductorKOREA ELECTRONICS TELECOMM·Filed 2010·Granted Nov 8, 2011·3 cites·10 claims
- 1869US9537458B2Feedback amplifierELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2015·Granted Jan 3, 2017·2 cites·11 claims
- 1969US7468295B2Method of fabricating T-gateKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Dec 23, 2008·4 cites·7 claims
- 2067US10134854B2High electron mobility transistor and fabrication method thereofELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2016·Granted Nov 20, 2018·1 cites·10 claims
- 2167US9780176B2High reliability field effect power device and manufacturing method thereofELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2016·Granted Oct 3, 2017·1 cites·20 claims
- 2267US8853821B2Vertical capacitors and methods of forming the sameKIM SEONG-IL·Filed 2012·Granted Oct 7, 2014·2 cites·10 claims
- 2362US9438199B2Component package including matching circuit and matching method thereofELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2014·Granted Sep 6, 2016·1 cites·11 claims
- 2462US7915106B2Method of fabricating T-gateKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Mar 29, 2011·2 cites·6 claims
- 2561US8518794B2Semiconductor devices and methods of forming thereofAHN HOKYUN·Filed 2010·Granted Aug 27, 2013·2 cites·18 claims
- 2660US9165896B2GaN transistor with improved bonding pad structure and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Oct 20, 2015·0 cites·7 claims
- 2759US5970328AFabrication method of T-shaped gate electrode in semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Oct 19, 1999·20 cites·16 claims
- 2858US8586462B2Method of manufacturing a field-effect transistorAHN HOKYUN·Filed 2011·Granted Nov 19, 2013·1 cites·9 claims
- 2958US8124489B2Monolithic microwave integrated circuit device and method of forming the sameMIN BYOUNG-GUE·Filed 2010·Granted Feb 28, 2012·1 cites·16 claims
- 3057US9209266B2High electron mobility transistor and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Dec 8, 2015·0 cites·9 claims
- 3153US5702975AMethod for isolating semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Dec 30, 1997·14 cites·5 claims
- 3252US11315951B2Semiconductor device and method of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2020·Granted Apr 26, 2022·0 cites·18 claims
- 3351US9490214B2Semiconductor device and method of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2015·Granted Nov 8, 2016·0 cites·11 claims
- 3450US9166011B2Semiconductor device having stable gate structure and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Oct 20, 2015·0 cites·11 claims
- 3550US6940354B2Microwave power amplifierKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Sep 6, 2005·6 cites·5 claims
- 3650US2013187197A1High electron mobility transistor and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2012·Application pending·0 cites
- 3749US2014035044A1Field-effect transistor and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 3848US2016020147A1Impedance matching circuit, power amplifier and manufacturing method for variable capacitorKOREA ELECTRONICS TELECOMM·Filed 2015·Application pending·0 cites
- 3948US2013207730A1Impedance matching circuit, power amplifier and manufacturing method for variable capacitorKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 4048US2014159050A1Field effect transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 4147US5885847AMethod of fabricating a compound semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Mar 23, 1999·14 cites·8 claims
- 4245US9224830B2Transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Dec 29, 2015·0 cites·18 claims
- 4344US2015194494A1Field-effect transistor for high voltage driving and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2014·Application pending·0 cites
- 4444US2010133586A1Heterojunction bipolar transistor and method of forming the sameKOREA ELECTRONICS TELECOMM·Filed 2009·Application pending·0 cites
- 4543US2014160689A1PackageKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 4642US2014167806A1Semiconductor device testing apparatusKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 4742US2015144961A1High frequency device and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2014·Application pending·0 cites
- 4841US9837719B2Patch antennaELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2016·Granted Dec 5, 2017·0 cites·14 claims
- 4940US2019081166A1Gate-all-around device and method for fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2018·Application pending·0 cites
- 5036US2008080599A1Heterodyne rf transceiver for radar sensorKANG DONG MIN·Filed 2007·Application pending·0 cites
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →