Inventor · disambiguated record
I-Hsieh Wong
Also filed as: WONG I-HSIEH
30 granted patents·13 pending applications·40 citations·filing 2014–2025
94Inventor score
Top patents by PatentIndex Score
43 records- 0198US11189705B2Methods of reducing parasitic capacitance in multi-gate field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·7 cites·20 claims
- 0297US11456383B2Semiconductor device having a contact plug with an air gap spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·7 cites·20 claims
- 0395US11973122B2Nano-FET semiconductor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 30, 2024·2 cites·20 claims
- 0494US10332985B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·10 cites·20 claims
- 0591US11901455B2Method of manufacturing a FinFET by implanting a dielectric with a dopantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
- 0686US12382703B2Spacer features for nanosheet-based devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 5, 2025·1 cites·20 claims
- 0785US11901415B2Transistor isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
- 0885US2024395936A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0983US12308371B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 1083US2025324653A1METHOD OF MANUFACTURING A FinFET BY IMPLANTING A DIELECTRIC WITH A DOPANTTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1182US12432963B2Device having an air gap adjacent to a contact plug and covered by a doped dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 1282US12363950B2Nano-FET semiconductor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1382US11626505B2Dielectric inner spacers in multi-gate field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 11, 2023·1 cites·20 claims
- 1482US2025311305A1Nano-fet semiconductor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1581US12402379B2Epitaxial layer under a gate structure of a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 1680US11362199B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 14, 2022·2 cites·20 claims
- 1780US9847233B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 19, 2017·3 cites·20 claims
- 1880US2025318224A1Epitaxial layer under a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1978US2025366007A1Isolation structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2078US2025318233A1Dielectric inner spacers in multi-gate field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2177US11205597B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·3 cites·17 claims
- 2276US2025318245A1Spacer features for nanosheet-based devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2375US12382692B2Dielectric inner spacers in multi-gate field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 2475US11791410B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 2575US2024379455A1Methods For Forming Source/Drain FeaturesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2674US10957784B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·1 cites·20 claims
- 2774US10777426B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 15, 2020·1 cites·20 claims
- 2874US2024250155A1Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2972US2023253500A1Semiconductor device and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3070US12237232B2Methods for forming source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 3170US11949002B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3270US11404284B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 3367US2024079483A1Isolation structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3467US2022352163A1Hybrid Sram Design With Nano-StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3566US11063149B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·20 claims
- 3662US11631768B2Semiconductor device and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 18, 2023·0 cites·20 claims
- 3761US11728344B2Hybrid SRAM design with nano-structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·20 claims
- 3859US10510888B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 3955US10340383B2Semiconductor device having stressor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 2, 2019·0 cites·20 claims
- 4053US9923093B2Field effect transistors and methods of forming sameUNIV NAT TAIWAN·Filed 2016·Granted Mar 20, 2018·0 cites·20 claims
- 4151US2023134971A1Method Of Fabricating Epitaxial Source/Drain FeatureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4249US9559209B2Field effect transistors and methods of forming sameUNIV NAT TAIWAN·Filed 2015·Granted Jan 31, 2017·0 cites·20 claims
- 4342US10068995B2Semiconductor device including field effect transistor and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 4, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →