Inventor · disambiguated record

I-Wen Wu

Also filed as: WU I-WEN

48 granted patents·27 pending applications·73 citations·filing 2004–2025

97Inventor score

Technology areasH10P H10W H10D H01L G01C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD70 ACER INC2 PRIME OPTICAL FIBER CORP1 TAIWAN SEMICONDUCTOR MFG1 UNITED MICROELECTRONICS CORP1

Top patents by PatentIndex Score

75 records

0198US12068200B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·5 cites·20 claims
0298US11615987B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
0397US11302802B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·4 cites·20 claims
0496US12068378B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·2 cites·20 claims
0596US11784222B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
0695US11876135B2Epitaxial source/drain structures for multigate devices and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 16, 2024·2 cites·20 claims
0795US10504990B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
0894US12464806B2Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·1 cites·20 claims
0994US11791387B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
1093US11728394B2Method of forming backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
1193US10490459B2Method for source/drain contact formation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·6 cites·20 claims
1292US10943818B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·6 cites·20 claims
1392US10930564B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·7 cites·20 claims
1489US12266703B2Dielectric structures for semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 1, 2025·1 cites·20 claims
1587US2025359137A1Disposable Hard Mask for Interconnect FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1684US12125879B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
1784US11239309B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 1, 2022·2 cites·20 claims
1884US2024379762A1Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1983US12283630B2Epitaxial source/drain structures for multigate devices and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
2083US12068396B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
2183US9449886B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 20, 2016·4 cites·20 claims
2283US2024363733A1Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2381US9318488B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·5 cites·20 claims
2481US2025366046A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2580US12224324B2Method of forming backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
2680US2025254930A1Epitaxial Source/Drain Structures for Multigate Devices and Methods of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2780US2025359285A1Backside Via and Dual Side Power Rail For Epitaxial Source/Drain StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2879US11757022B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
2979US2024371938A1Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3079US2024387660A1Disposable Hard Mask for Interconnect FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3177US2024292590A1Source/drain contact having a protruding segmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3277US2025308984A1Isolation Structure And A Self-Aligned Capping Layer Formed ThereonTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3375US11968817B2Source/drain contact having a protruding segmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
3475US2024387626A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3574US2025185330A1Method Of Forming Backside Power RailsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3673US12507459B2Semiconductor device contact structures and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
3773US2024371955A1Contact structure with silicide and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3871US11843028B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
3971US2025006557A1Backside Via and Dual Side Power Rail For Epitaxial Source/Drain StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4070US12119378B2Methods of forming epitaxial source/drain features in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 15, 2024·0 cites·20 claims
4169US12334388B2Isolation structure and a self-aligned capping layer formed thereonTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
4268US12464774B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
4368US12080769B2Contact structure with silicide and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
4468US11264393B2Source/drain contact having a protruding segmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
4568US10790197B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·0 cites·20 claims
4667US12439678B2Isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 7, 2025·0 cites·20 claims
4767US12324202B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
4867US11855161B2Semiconductor device contact structures and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
4967US11694931B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
5067US11532507B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims

Showing the top 50 of 75 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →