Inventor · disambiguated record
I-Wei Yang
Also filed as: YANG I-WEI
24 granted patents·9 pending applications·27 citations·filing 2018–2025
93Inventor score
Top patents by PatentIndex Score
33 records- 0197US11855085B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0297US11830926B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·3 cites·20 claims
- 0395US10468527B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·10 cites·20 claims
- 0490US11289480B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 0590US2025126883A1Semiconductor Structure Cutting Process and Structures Formed TherebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0689US10867998B1Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·3 cites·20 claims
- 0787US12218130B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 0887US12002715B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 4, 2024·2 cites·20 claims
- 0987US2025098257A1Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1084US12166105B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1184US10461171B2Structure and formation method of semiconductor device with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·2 cites·20 claims
- 1283US2025254977A1Semiconductor structure with cutting depth controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1382US10756087B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·20 claims
- 1482US2024371704A1Semiconductor Device with Cut Metal Gate and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1581US12310096B2Method for fabricating semiconductor structure with cutting depth controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 1681US11264287B2Semiconductor device with cut metal gate and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·1 cites·20 claims
- 1780US12112990B2Semiconductor device with cut metal gate and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1875US11652005B2Semiconductor device with cut metal gate and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 16, 2023·0 cites·20 claims
- 1975US11444080B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 2073US11728341B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 2173US11721588B2Semiconductor structure with cutting depth control and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2272US2024387280A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2370US12490496B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 2470US11637206B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·0 cites·20 claims
- 2566US11201230B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·0 cites·20 claims
- 2666US10833077B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 2764US10872978B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·0 cites·20 claims
- 2859US2025234594A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2958US11031290B2Semiconductor structure with cutting depth control and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·0 cites·20 claims
- 3058US2025285869A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3154US2024387283A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUTOR MFG COMPANY LIMITED·Filed 2024·Application pending·0 cites
- 3253US2022384270A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3342US12107013B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUTOR MFG COMPANY LIMITED·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →