Inventor · disambiguated record
Ignasi Cortes Mayol
Also filed as: CORTES MAYOL IGNASI
2 granted patents·0 citations·filing 2017–2017
23Inventor score
Files withGLOBALFOUNDRIES INC2
Top patents by PatentIndex Score
2 records- 0143US10497803B2Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applicationsGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 3, 2019·0 cites·20 claims
- 0235US10930777B2Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltageGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 23, 2021·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Ignasi Cortes Mayol files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →