Inventor · disambiguated record
Ignasi Cortes Mayol
Also filed as: MAYOL IGNASI CORTES
5 granted patents·12 citations·filing 2016–2018
70Inventor score
Files withGLOBALFOUNDRIES INC5
Top patents by PatentIndex Score
5 records- 0191US10121846B1Resistor structure with high resistance based on very thin semiconductor layerGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 6, 2018·10 cites·19 claims
- 0270US10170614B2Method of forming a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 1, 2019·1 cites·20 claims
- 0362US10283584B2Capacitive structure in a semiconductor device having reduced capacitance variabilityGLOBALFOUNDRIES INC·Filed 2016·Granted May 7, 2019·1 cites·20 claims
- 0450US10038091B2Semiconductor device and methodGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 31, 2018·0 cites·20 claims
- 0546US10283642B1Thin body field effect transistor including a counter-doped channel area and a method of forming the sameGLOBALFOUNDRIES INC·Filed 2018·Granted May 7, 2019·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →