Inventor · disambiguated record
Il Keoun Han
Also filed as: HAN IL KEOUN
8 granted patents·2 pending applications·66 citations·filing 1997–2004
85Inventor score
Top patents by PatentIndex Score
10 records- 0170US6376299B1Capacitor for semiconductor memory device and method of manufacturing the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted Apr 23, 2002·12 cites·24 claims
- 0268US6790728B1Method of manufacturing a flash memoryHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Sep 14, 2004·12 cites·5 claims
- 0367US6964913B2Method for forming floating gate in flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 15, 2005·11 cites·5 claims
- 0467US6740553B1Capacitor for semiconductor memory device and method of manufacturing the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted May 25, 2004·15 cites·74 claims
- 0544US5926711AMethod of forming an electrode of a semiconductor deviceHYUNDAI ELECTRONICS IND LTD·Filed 1997·Granted Jul 20, 1999·10 cites·6 claims
- 0639US6034778AMethod of measuring surface area variation rate of a polysilicon film having hemispherical grains, and capacitance measuring method and apparatus by the sameHYUNDAI ELECTRONICS IND·Filed 1999·Granted Mar 7, 2000·6 cites·22 claims
- 0739US2002100959A1Capacitor for semiconductor memory device and method of manufacturing the sameHYUNDAI ELECTRONICS IND·Filed 2002·Application pending·0 cites
- 0835US7052956B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted May 30, 2006·0 cites·22 claims
- 0931US2002025624A1Method for manufacturing capacitor for use in semiconductor deviceFiled 2001·Application pending·0 cites
- 1026US6200877B1Method of forming a charge storage electrode having a selective hemispherical grains silicon film in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Mar 13, 2001·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →