Inventor · disambiguated record
Ilya Zwieback
Also filed as: ZWIEBACK ILYA
29 granted patents·9 pending applications·263 citations·filing 2000–2024
96Inventor score
Top patents by PatentIndex Score
38 records- 0196US10793972B1High quality silicon carbide crystals and method of making the sameII VI DELAWARE INC·Filed 2018·Granted Oct 6, 2020·15 cites·18 claims
- 0295US8858709B1Silicon carbide with low nitrogen content and method for preparationZWIEBACK ILYA·Filed 2007·Granted Oct 14, 2014·26 cites·19 claims
- 0395US8512471B2Halosilane assisted PVT growth of SiCZWIEBACK ILYA·Filed 2012·Granted Aug 20, 2013·11 cites·35 claims
- 0494US9090989B2Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereofII VI INC·Filed 2013·Granted Jul 28, 2015·8 cites·21 claims
- 0594US7767022B1Method of annealing a sublimation grown crystalII VI INC·Filed 2007·Granted Aug 3, 2010·53 cites·20 claims
- 0693US10294584B2SiC single crystal sublimation growth method and apparatusGUPTA AVINASH K·Filed 2010·Granted May 21, 2019·13 cites·14 claims
- 0793US8216369B2System for forming SiC crystals having spatially uniform doping impuritiesGUPTA AVINASH K·Filed 2009·Granted Jul 10, 2012·18 cites·9 claims
- 0891US8361227B2Silicon carbide single crystals with low boron contentII VI INC·Filed 2007·Granted Jan 29, 2013·9 cites·24 claims
- 0991US7608524B2Method of and system for forming SiC crystals having spatially uniform doping impuritiesII VI INC·Filed 2006·Granted Oct 27, 2009·22 cites·9 claims
- 1083US8313720B2Guided diameter SiC sublimation growth with multi-layer growth guideZWIEBACK ILYA·Filed 2008·Granted Nov 20, 2012·5 cites·12 claims
- 1182US6388260B1Solid state neutron detector and method for useSANDIA CORP·Filed 2000·Granted May 14, 2002·26 cites·26 claims
- 1281US9580837B2Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source materialII VI INC·Filed 2014·Granted Feb 28, 2017·2 cites·16 claims
- 1381US9322110B2Vanadium doped SiC single crystals and method thereofII VI INC·Filed 2013·Granted Apr 26, 2016·2 cites·9 claims
- 1480US11035054B2Large diameter silicon carbide single crystals and apparatus and method of manufacture thereofII VI DELAWARE INC·Filed 2019·Granted Jun 15, 2021·2 cites·4 claims
- 1579US8741413B2Large diameter, high quality SiC single crystals, method and apparatusII VI INC·Filed 2013·Granted Jun 3, 2014·4 cites·27 claims
- 1679US7547360B2Reduction of carbon inclusions in sublimation grown SiC single crystalsII VI INC·Filed 2007·Granted Jun 16, 2009·3 cites·13 claims
- 1778US2024352617A1Vanadium-compensated 4h and 6h single crystals of optical grade, and silicon carbide crystals and methods for producing sameII VI ADVANCED MAT LLC·Filed 2024·Application pending·0 cites
- 1877US11905618B2Large diameter silicon carbide single crystals and apparatus and method of manufacture thereofII VI DELAWARE INC·Filed 2021·Granted Feb 20, 2024·0 cites·17 claims
- 1977US9228274B2Axial gradient transport growth process and apparatus utilizing resistive heatingRENGARAJAN VARATHARAJAN·Filed 2009·Granted Jan 5, 2016·5 cites·7 claims
- 2077US9017629B2Intra-cavity gettering of nitrogen in SiC crystal growthZWIEBACK ILYA·Filed 2006·Granted Apr 28, 2015·6 cites·8 claims
- 2176US11761117B2SiC single crystal sublimation growth apparatusII VI DELAWARE INC·Filed 2021·Granted Sep 19, 2023·0 cites·8 claims
- 2276US11149359B2SiC single crystal sublimation growth apparatusII VI DELAWARE INC·Filed 2019·Granted Oct 19, 2021·0 cites·10 claims
- 2375US8449671B2Fabrication of SiC substrates with low warp and bowWU PING·Filed 2008·Granted May 28, 2013·3 cites·20 claims
- 2470US12060650B2Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing sameII VI DELAWARE INC·Filed 2021·Granted Aug 13, 2024·0 cites·8 claims
- 2570USRE46315ELarge diameter, high quality SiC single crystals, method and apparatusII VI INC·Filed 2014·Granted Feb 21, 2017·2 cites·27 claims
- 2668US6452189B1Ammonium nickel sulfate crystalsINRAD·Filed 2000·Granted Sep 17, 2002·14 cites·6 claims
- 2768US6369392B1Cerium doped crystalsINRAD·Filed 2000·Granted Apr 9, 2002·14 cites·38 claims
- 2867US12006591B2Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second materialII VI DELAWARE INC·Filed 2020·Granted Jun 11, 2024·0 cites·13 claims
- 2967US2017321345A1Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture ThereofII VI INC·Filed 2017·Application pending·0 cites
- 3062USRE48378EVanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereofII VI DELAWARE INC·Filed 2017·Granted Jan 5, 2021·0 cites·28 claims
- 3162US2011303884A1SiC Crystals Having Spatially Uniform Doping ImpuritiesGUPTA AVINASH K·Filed 2011·Application pending·0 cites
- 3258US2025235959A1Method And Structure For Laser SplittingII VI ADVANCED MAT LLC·Filed 2024·Application pending·0 cites
- 3356US2016097143A1Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizing Resistive HeatingII VI INC·Filed 2015·Application pending·0 cites
- 3455US2022049373A1Sic single crystal(s) doped from gas phaseII VI DELAWARE INC·Filed 2021·Application pending·0 cites
- 3553US9388509B2Method for synthesizing ultrahigh-purity silicon carbideII VI INC·Filed 2013·Granted Jul 12, 2016·0 cites·17 claims
- 3649US2009053125A1Stabilizing 4H Polytype During Sublimation Growth Of SiC Single CrystalsIL VI INC·Filed 2008·Application pending·0 cites
- 3741US2012285370A1Sublimation growth of sic single crystalsGUPTA AVINASH K·Filed 2010·Application pending·0 cites
- 3840US2008190355A1Low-Doped Semi-Insulating Sic Crystals and MethodII VI INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →