SiC Crystals Having Spatially Uniform Doping Impurities

Abstract

A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule.

1 . A sublimation-grown silicon carbide (SiC) single crystal boule including a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in said continuous section of the boule. 
     
     
         2 . The SiC boule of  claim 1 , wherein the deep level dopant is vanadium. 
     
     
         3 . The SiC boule of  claim 2 , wherein the concentration of vanadium is between 2×10 6  cm −3  and 2×10 7  cm −3 . 
     
     
         4 . The SiC boule of  claim 1 , wherein a resistivity of each of a plurality of wafers obtained from the boule is greater than about 5×10 9  ohm-cm. 
     
     
         5 . The SiC boule of  claim 1 , wherein a resistivity of each of a plurality of wafers obtained from the boule is greater than about 1×10 10  ohm-cm. 
     
     
         6 . The SiC boule of  claim 1 , wherein a resistivity of each of a plurality of wafers obtained from the boule is greater than about 5×10 10  ohm-cm. 
     
     
         7 . The SiC boule of  claim 1 , wherein a resistivity of each of a plurality of wafers obtained from the boule is greater than about 1×10 11  ohm-cm. 
     
     
         8 . The SiC boule of  claim 1 , wherein at least 10 wafers are obtained from the boule. 
     
     
         9 . The SiC boule of  claim 1 , wherein at least 13 wafers are obtained from the boule. 
     
     
         10 . The SiC boule of  claim 1 , wherein at least 17 wafers are obtained from the boule. 
     
     
         11 . A sublimation-grown silicon carbide (SiC) single crystal boule including a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a sublimation-growth direction of the SiC single crystal boule a concentration of the deep level dopant in a plurality of at least 10 consecutive wafers obtained from the SiC single crystal boule varies by not more than 25% from the average concentration of the deep level dopant in any one of the plurality of wafers. 
     
     
         12 . The SiC boule of  claim 11 , wherein the deep level dopant is vanadium. 
     
     
         13 . The SiC boule of  claim 12 , wherein the concentration of vanadium is between 2×10 6  cm −3  and 2×10 7  cm −3 . 
     
     
         14 . The SiC boule of  claim 11 , wherein the resistivity of each of the plurality of wafers is greater than about 5×10 9  ohm-cm. 
     
     
         15 . The SiC boule of  claim 11 , wherein the resistivity of each of the plurality of wafers is greater than about 1×10 10  ohm-cm. 
     
     
         16 . The SiC boule of  claim 11 , wherein the resistivity of each of the plurality of wafers is greater than about 5×10 10  ohm-cm. 
     
     
         17 . The SiC boule of  claim 11 , wherein the resistivity of each of the plurality of wafers is greater than about 1×10 11  ohm-cm. 
     
     
         18 . The SiC boule of  claim 11 , wherein the plurality of wafers is at least 13 wafers. 
     
     
         19 . The SiC boule of  claim 11 , wherein the plurality of wafers is desirably at least 17 wafers. 
     
     
         20 . A pair of silicon carbide (SiC) wafers obtained from first and second parts of a sublimation-grown SiC single crystal boule that are spaced from each other a distance no less than a thickness of at least eight other SiC wafers, wherein one of the pair of wafers has a concentration of the deep level dopant that is different from the concentration of the deep level dopant in the other of the pair of wafers by not more than 25%. 
     
     
         21 . The SiC wafers of  claim 20 , wherein the deep level dopant is vanadium. 
     
     
         22 . The SiC wafers of  claim 21 , wherein the concentration of vanadium is between 2×10 6  cm −3  and 2×10 7  cm −3 . 
     
     
         23 . The SiC boule of  claim 20 , wherein the resistivity of each of the plurality of wafers is greater than about 5×10 9  ohm-cm. 
     
     
         24 . The SiC boule of  claim 20 , wherein the resistivity of each of the plurality of wafers is greater than about 1×10 10  ohm-cm. 
     
     
         25 . The SiC boule of  claim 20 , wherein the resistivity of each of the plurality of wafers is greater than about 5×10 10  ohm-cm. 
     
     
         26 . The SiC boule of  claim 20 , wherein the resistivity of each of the plurality of wafers is greater than about 1×10 11  ohm-cm. 
     
     
         27 . The SiC boule of  claim 20 , wherein the plurality of wafers is at least 13 wafers. 
     
     
         28 . The SiC boule of  claim 20 , wherein the plurality of wafers is desirably at least 17 wafers.