Inventor · disambiguated record
Imran Hashim
Also filed as: HASHIM IMRAN
108 granted patents·15 pending applications·1,653 citations·filing 1997–2023
99Inventor score
Top patents by PatentIndex Score
123 records- 0198US8343813B2Resistive-switching memory elements having improved switching characteristicsINTERMOLECULAR INC·Filed 2010·Granted Jan 1, 2013·30 cites·18 claims
- 0297US8686389B1Diffusion barrier layer for resistive random access memory cellsINTERMOLECULAR INC·Filed 2012·Granted Apr 1, 2014·33 cites·18 claims
- 0397US7824935B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateINTERMOLECULAR INC·Filed 2008·Granted Nov 2, 2010·25 cites·8 claims
- 0496US10923023B1Stacked hybrid micro LED pixel architectureAPPLE INC·Filed 2016·Granted Feb 16, 2021·13 cites·23 claims
- 0596US8766234B1Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacksINTERMOLECULAR INC·Filed 2012·Granted Jul 1, 2014·28 cites·20 claims
- 0696US6436267B1Method for achieving copper fill of high aspect ratio interconnect featuresAPPLIED MATERIALS INC·Filed 2000·Granted Aug 20, 2002·105 cites·35 claims
- 0796US6287977B1Method and apparatus for forming improved metal interconnectsAPPLIED MATERIALS INC·Filed 1998·Granted Sep 11, 2001·161 cites·18 claims
- 0896US6066892ACopper alloy seed layer for copper metallization in an integrated circuitAPPLIED MATERIALS INC·Filed 1998·Granted May 23, 2000·185 cites·20 claims
- 0995US9001554B2Resistive random access memory cell having three or more resistive statesINTERMOLECULAR INC·Filed 2013·Granted Apr 7, 2015·18 cites·19 claims
- 1095US8866121B2Current-limiting layer and a current-reducing layer in a memory deviceWANG YUN·Filed 2012·Granted Oct 21, 2014·14 cites·17 claims
- 1195US8569104B2Transition metal oxide bilayersPHAM HIEU·Filed 2012·Granted Oct 29, 2013·27 cites·18 claims
- 1295US8288297B1Atomic layer deposition of metal oxide materials for memory applicationsWANG YUN·Filed 2011·Granted Oct 16, 2012·23 cites·20 claims
- 1394US6559061B2Method and apparatus for forming improved metal interconnectsAPPLIED MATERIALS INC·Filed 2001·Granted May 6, 2003·63 cites·16 claims
- 1494US6160315ACopper alloy via structureAPPLIED MATERIALS INC·Filed 2000·Granted Dec 12, 2000·73 cites·24 claims
- 1593US6709987B2Method and apparatus for forming improved metal interconnectsAPPLIED MATERIALS INC·Filed 2002·Granted Mar 23, 2004·55 cites·25 claims
- 1693US6500762B2Method of depositing a copper seed layer which promotes improved feature surface coverageAPPLIED MATERIALS INC·Filed 2002·Granted Dec 31, 2002·56 cites·22 claims
- 1793US6037257ASputter deposition and annealing of copper alloy metallizationAPPLIED MATERIALS INC·Filed 1997·Granted Mar 14, 2000·117 cites·15 claims
- 1892US8969169B1DRAM MIM capacitor using non-noble electrodesINTERMOLECULAR INC·Filed 2013·Granted Mar 3, 2015·13 cites·20 claims
- 1992US8735217B2Multifunctional electrodeINTERMOLECULAR INC·Filed 2013·Granted May 27, 2014·4 cites·20 claims
- 2091US9281357B2DRAM MIM capacitor using non-noble electrodesINTERMOLECULAR INC·Filed 2015·Granted Mar 8, 2016·7 cites·19 claims
- 2190US8817524B2Resistive random access memory cells having metal alloy current limiting layersINTERMOLECULAR INC·Filed 2012·Granted Aug 26, 2014·11 cites·20 claims
- 2290US8681530B2Nonvolatile memory device having a current limiting elementWANG YUN·Filed 2012·Granted Mar 25, 2014·11 cites·21 claims
- 2389US8698119B2Nonvolatile memory device using a tunnel oxide as a current limiter elementTENDULKAR MIHIR·Filed 2012·Granted Apr 15, 2014·12 cites·17 claims
- 2489US8278735B2Yttrium and titanium high-k dielectric filmsHASHIM IMRAN·Filed 2010·Granted Oct 2, 2012·10 cites·22 claims
- 2589US7927947B2Methods for depositing high-K dielectricsINTERMOLECULAR INC·Filed 2009·Granted Apr 19, 2011·10 cites·20 claims
- 2689US6566259B1Integrated deposition process for copper metallizationAPPLIED MATERIALS INC·Filed 2000·Granted May 20, 2003·41 cites·27 claims
- 2788US6992012B2Method and apparatus for forming improved metal interconnectsAPPLIED MATERIALS INC·Filed 2004·Granted Jan 31, 2006·35 cites·33 claims
- 2887US8787066B2Method for forming resistive switching memory elements with improved switching behaviorWANG YUN·Filed 2011·Granted Jul 22, 2014·8 cites·20 claims
- 2987US8686386B2Nonvolatile memory device using a varistor as a current limiter elementTENDULKAR MIHIR·Filed 2012·Granted Apr 1, 2014·8 cites·19 claims
- 3085US8618525B2Work function tailoring for nonvolatile memory applicationsWANG YUN·Filed 2011·Granted Dec 31, 2013·6 cites·11 claims
- 3185US8466446B2Atomic layer deposition of metal oxide materials for memory applicationsWANG YUN·Filed 2012·Granted Jun 18, 2013·5 cites·20 claims
- 3285US8143619B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateVERMA GAURAV·Filed 2010·Granted Mar 27, 2012·4 cites·6 claims
- 3385US6391776B1Method of depositing a copper seed layer which promotes improved feature surface coverageAPPLIED MATERIALS INC·Filed 2001·Granted May 21, 2002·27 cites·24 claims
- 3484US9129894B2Embedded nonvolatile memory elements having resistive switching characteristicsHASHIM IMRAN·Filed 2012·Granted Sep 8, 2015·8 cites·20 claims
- 3584US8906736B1Multifunctional electrodeINTERMOLECULAR INC·Filed 2014·Granted Dec 9, 2014·1 cites·20 claims
- 3683US8853099B2Nonvolatile resistive memory element with a metal nitride containing switching layerWANG YUN·Filed 2011·Granted Oct 7, 2014·5 cites·6 claims
- 3783US8737036B2Titanium based high-K dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted May 27, 2014·4 cites·16 claims
- 3883US8383430B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateINTERMOLECULAR INC·Filed 2012·Granted Feb 26, 2013·3 cites·12 claims
- 3983US7968452B2Titanium-based high-K dielectric filmsINTERMOLECULAR INC·Filed 2009·Granted Jun 28, 2011·6 cites·20 claims
- 4083US6387805B2Copper alloy seed layer for copper metallizationAPPLIED MATERIALS INC·Filed 1997·Granted May 14, 2002·58 cites·38 claims
- 4182US9246096B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2015·Granted Jan 26, 2016·3 cites·19 claims
- 4282US9054307B2Resistive random access memory cells having metal alloy current limiting layersINTERMOLECULAR INC·Filed 2014·Granted Jun 9, 2015·6 cites·20 claims
- 4381US9178147B2Resistive-switching memory elements having improved switching characteristicsINTERMOLECULAR INC·Filed 2015·Granted Nov 3, 2015·2 cites·19 claims
- 4481US6174811B1Integrated deposition process for copper metallizationAPPLIED MATERIALS INC·Filed 1998·Granted Jan 16, 2001·48 cites·7 claims
- 4580US8895949B2Nonvolatile memory device using a varistor as a current limiter elementSANDISK 3D LLC·Filed 2014·Granted Nov 25, 2014·3 cites·18 claims
- 4680US8779407B2Multifunctional electrodePHAM HIEU·Filed 2012·Granted Jul 15, 2014·1 cites·19 claims
- 4780US6184137B1Structure and method for improving low temperature copper reflow in semiconductor featuresAPPLIED MATERIALS INC·Filed 1998·Granted Feb 6, 2001·48 cites·22 claims
- 4879US8871621B2Method of forming an asymmetric MIMCAP or a schottky device as a selector element for a cross-bar memory arrayINTERMOLECULAR INC·Filed 2012·Granted Oct 28, 2014·4 cites·7 claims
- 4978US9006023B2Diffusion barrier layer for resistive random access memory cellsINTERMOLECULAR INC·Filed 2014·Granted Apr 14, 2015·2 cites·16 claims
- 5078US8995172B2Nonvolatile memory device having a current limiting elementINTERMOLECULAR INC·Filed 2014·Granted Mar 31, 2015·4 cites·20 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Imran Hashim files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →