Inventor · disambiguated record
In-Gyu Baek
Also filed as: BAEK IN-GYU
64 granted patents·17 pending applications·1,069 citations·filing 2004–2023
99Inventor score
Top patents by PatentIndex Score
81 records- 0198US8619490B2Semiconductor memory devicesYU HAK-SOO·Filed 2011·Granted Dec 31, 2013·179 cites·22 claims
- 0298US7351594B2Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 1, 2008·102 cites·29 claims
- 0397US7495984B2Resistive memory devices including selected reference memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·54 cites·15 claims
- 0497US7352021B2Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrierSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 1, 2008·96 cites·14 claims
- 0597US7292469B2Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operatedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 6, 2007·63 cites·31 claims
- 0696US7952914B2Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 31, 2011·45 cites·27 claims
- 0796US7420198B2Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 2, 2008·43 cites·23 claims
- 0895US7952163B2Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systemsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 31, 2011·43 cites·14 claims
- 0995US7639521B2Resistive memory cells and devices having asymmetrical contactsSAMSUNG ELECCTRONICS CO LTD·Filed 2006·Granted Dec 29, 2009·62 cites·12 claims
- 1092US8553445B2Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the sameBAEK IN-GYU·Filed 2011·Granted Oct 8, 2013·14 cites·7 claims
- 1191US8525247B2Non-volatile memory device having variable resistance elementPARK CHAN-JIN·Filed 2012·Granted Sep 3, 2013·17 cites·9 claims
- 1291US7672155B2Resistive memory devices including selected reference memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 2, 2010·23 cites·4 claims
- 1390US8174875B2Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methodsBAEK IN-GYU·Filed 2011·Granted May 8, 2012·12 cites·13 claims
- 1489US9184218B2Semiconductor memory device having three-dimensional cross point arraySAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·10 cites·20 claims
- 1589US8664633B2Non-volatile memory devices having resistance changeable elements and related systems and methodsPARK HEUNG-KYU·Filed 2011·Granted Mar 4, 2014·17 cites·20 claims
- 1689US8477554B2Semiconductor memory deviceYU HAK-SOO·Filed 2011·Granted Jul 2, 2013·13 cites·18 claims
- 1789US7535035B2Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·22 cites·19 claims
- 1889US7378698B2Magnetic tunnel junction and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 27, 2008·51 cites·8 claims
- 1988US11482564B2Image sensing apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 25, 2022·2 cites·20 claims
- 2088US11417699B2Image sensor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
- 2187US7871866B2Method of manufacturing semiconductor device having transition metal oxide layer and related deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 18, 2011·10 cites·27 claims
- 2286US8730710B2Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 20, 2014·8 cites·8 claims
- 2386US7480174B2Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operatedSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 20, 2009·14 cites·5 claims
- 2485US9514813B2Resistive memory device, resistive memory system, and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 6, 2016·7 cites·20 claims
- 2585US7741669B2Nonvolatile memory cells employing a transition metal oxide layers as a data storage material layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 22, 2010·10 cites·10 claims
- 2684US11107850B2Image sensorsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 31, 2021·2 cites·20 claims
- 2784US8456891B2Nonvolatile memory cells having oxygen diffusion barrier layers thereinBAEK IN-GYU·Filed 2011·Granted Jun 4, 2013·8 cites·20 claims
- 2884US7961496B2Resistive memory cells and devices having asymmetrical contactsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 14, 2011·10 cites·16 claims
- 2983US8451645B2Variable resistance memory devices and methods of programming variable resistance memory devicesYOON HONG-SIK·Filed 2010·Granted May 28, 2013·10 cites·15 claims
- 3083US8345467B2Resistive memory devices including selected reference memory cells operating responsive to read operationsSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·6 cites·7 claims
- 3182US11183527B2Three-dimensional image sensor based on structured lightSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 23, 2021·3 cites·13 claims
- 3281US10741607B2Image sensing apparatus and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 11, 2020·3 cites·20 claims
- 3381US8634227B2Resistive memory device having voltage level equalizerYU HAK SOO·Filed 2011·Granted Jan 21, 2014·8 cites·6 claims
- 3480US7446333B2Nonvolatile memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 4, 2008·9 cites·11 claims
- 3579US10522581B2Image sensor and an image processing device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 31, 2019·2 cites·13 claims
- 3678US8873274B2Resistive memory cells and devices having asymmetrical contactsBAEK IN-GYU·Filed 2013·Granted Oct 28, 2014·4 cites·8 claims
- 3778US7791923B2Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory elementSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·11 cites·17 claims
- 3877US8023311B2Resistive memory devices including selected reference memory cells operating responsive to read operationsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·7 cites·8 claims
- 3976US8614125B2Nonvolatile memory devices and methods of forming the sameYIM EUN-KYUNG·Filed 2008·Granted Dec 24, 2013·6 cites·5 claims
- 4074US9263673B2Resistive memory device having asymmetric diode structureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 16, 2016·2 cites·20 claims
- 4174US8796662B2Semiconductor devices with vertical structure including data storage layer or patternSONG SEONG-HO·Filed 2012·Granted Aug 5, 2014·4 cites·20 claims
- 4274US7838863B2Semiconductor devices having resistive memory elementsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 23, 2010·6 cites·20 claims
- 4373US7936044B2Non-volatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 3, 2011·4 cites·26 claims
- 4473US7141438B2Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·17 cites·16 claims
- 4572US9728252B2Resistive memory device with temperature compensation, resistive memory system, and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 8, 2017·3 cites·8 claims
- 4672US9118009B2Method of fabricating a variable reistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 25, 2015·3 cites·20 claims
- 4771US2023395639A1Image sensor with enhanced multi-substrate structures and interconnectsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4868US8472237B2Semiconductor devices and methods of driving the sameOH JEONG-HOON·Filed 2010·Granted Jun 25, 2013·5 cites·21 claims
- 4967US10109664B2Image sensors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 23, 2018·1 cites·19 claims
- 5067US8619458B2Bidirectional resistive memory devices using selective read voltage polarityBAEK IN-GYU·Filed 2012·Granted Dec 31, 2013·3 cites·18 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →