Inventor · disambiguated record
In-Wook Cho
Also filed as: CHO IN-WOOK
18 granted patents·5 pending applications·150 citations·filing 2003–2008
93Inventor score
Top patents by PatentIndex Score
23 records- 0194US6815764B2Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·71 cites·13 claims
- 0282US7361560B2Method of manufacturing a dielectric layer in a memory device that includes nitriding stepSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·8 cites·10 claims
- 0382US7184316B2Non-volatile memory cell array having common drain lines and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 27, 2007·11 cites·32 claims
- 0480US7420243B2Non-volatile memory device with buried control gate and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 2, 2008·8 cites·31 claims
- 0575US7320920B2Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 22, 2008·5 cites·21 claims
- 0674US7179709B2Method of fabricating non-volatile memory device having local SONOS gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 20, 2007·13 cites·28 claims
- 0772US7045850B2Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 16, 2006·14 cites·5 claims
- 0868US7473961B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 6, 2009·4 cites·35 claims
- 0963US7371640B2Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 13, 2008·2 cites·25 claims
- 1052US7700437B2Non-volatile memory device with buried control gate and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 20, 2010·0 cites·16 claims
- 1150US7060563B2Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 13, 2006·3 cites·13 claims
- 1250US6998309B2Method of manufacturing a non-volatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 14, 2006·8 cites·21 claims
- 1349US7932154B2Method of fabricating non-volatile flash memory device having at least two different channel concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 26, 2011·0 cites·9 claims
- 1448US7566928B2Byte-operational nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 28, 2009·0 cites·18 claims
- 1548US7129591B2Semiconductor device having align key and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 31, 2006·2 cites·28 claims
- 1647US2006157775A1Byte-operational nonvolatile semiconductor memory deviceKIM SUNG-HO·Filed 2006·Application pending·0 cites
- 1746US7345925B2Soft erasing methods for nonvolatile memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 18, 2008·1 cites·19 claims
- 1840US2007177427A1Nonvolatile memory device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1939US7586137B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 8, 2009·0 cites·28 claims
- 2039US2004207003A1Byte-operational nonvolatile semiconductor memory deviceFiled 2004·Application pending·0 cites
- 2138US7718504B2Semiconductor device having align key and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 18, 2010·0 cites·9 claims
- 2237US2006091458A1Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2334US2005067651A1Nonvolatile memory cell employing a plurality of dielectric nanoclusters and method of fabricating the sameFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →