Inventor · disambiguated record
Ippei Kubono
Also filed as: KUBONO Ippei
0 granted patents·13 pending applications·0 citations·filing 2021–2022
Top patents by PatentIndex Score
13 records- 0154US2025063786A1Nitride semiconductor substrate and method for producing sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 0254US2025015085A1Nitride semiconductor substrate and method for manufacturing nitride semiconductor substrateSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 0353US2024321576A1Nitride semiconductor substrate and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 0453US2024387170A1Nitride semiconductor substrate and method for manufacturing sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 0553US2025031421A1Substrate for electronic device and method for producing the sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 0653US2024141552A1Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing sameSHINETSU CHEMICAL CO·Filed 2022·Application pending·0 cites
- 0753US2024371628A1Method for manufacturing nitride semiconductor substrateSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 0851US2025323037A1Nitride semiconductor substrate and method for producing sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 0951US2024297224A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1050US2024079412A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1149US2025059676A1Nitride semiconductor substrate and method for producing nitride semiconductor substrateSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 1248US2023279581A1Method for producing nitride semiconductor wafer and nitride semiconductor waferSHINETSU HANDOTAI KK·Filed 2021·Application pending·0 cites
- 1348US2024355620A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →