Inventor · disambiguated record
Isamu Namose
Also filed as: NAMOSE ISAMU
24 granted patents·3 pending applications·463 citations·filing 1988–2022
96Inventor score
Top patents by PatentIndex Score
27 records- 0192US7999987B2Electro-optical display device and electronic deviceSEIKO EPSON CORP·Filed 2008·Granted Aug 16, 2011·32 cites·13 claims
- 0291US5200016ASemiconductor device manufacturing apparatusSEIKO EPSON CORP·Filed 1991·Granted Apr 6, 1993·136 cites·3 claims
- 0388US7692195B2Active-matrix device, electro-optical display device, and electronic apparatusSEIKO EPSON CORP·Filed 2008·Granted Apr 6, 2010·7 cites·18 claims
- 0477US7952041B2Active-matrix device, electro-optical display device, and electronic apparatusSEIKO EPSON CORP·Filed 2008·Granted May 31, 2011·5 cites·14 claims
- 0573US4923821AForming trench in semiconductor substrate with rounded cornersSEIKO EPSON CORP·Filed 1989·Granted May 8, 1990·41 cites·5 claims
- 0671US5173151AMethod of dry etching in semiconductor device processingSEIKO EPSON CORP·Filed 1991·Granted Dec 22, 1992·43 cites·10 claims
- 0768US8013849B2Active-matrix device, electro-optical display device, and electronic apparatusSEIKO EPSON CORP·Filed 2010·Granted Sep 6, 2011·1 cites·8 claims
- 0867US5147499AProcess for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structureAPPLIED MATERIALS INC·Filed 1991·Granted Sep 15, 1992·45 cites·19 claims
- 0965US5294294AMethod of dry etching in semiconductor device processingSEIKO EPSON CORP·Filed 1992·Granted Mar 15, 1994·34 cites·19 claims
- 1064US6642521B2Method for measuring greenhouse gases using infrared absorption spectrometerSEIKO EPSON CORP·Filed 2001·Granted Nov 4, 2003·6 cites·16 claims
- 1164US4980311AMethod of fabricating a semiconductor deviceSEIKO EPSON CORP·Filed 1988·Granted Dec 25, 1990·28 cites·27 claims
- 1260US7057175B2Infrared absorption measurement method, infrared absorption measurement device, and method of manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2004·Granted Jun 6, 2006·3 cites·11 claims
- 1357US12443179B2Control device and control method for maintaining the production of product with stable qualityOMRON TATEISI ELECTRONICS CO·Filed 2022·Granted Oct 14, 2025·0 cites·8 claims
- 1456US6821380B2Temperature adjustment apparatusSEIKO EPSON CORP·Filed 2001·Granted Nov 23, 2004·3 cites·18 claims
- 1555US5296093AProcess for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structureAPPLIED MATERIALS INC·Filed 1992·Granted Mar 22, 1994·28 cites·19 claims
- 1649US6838011B2Method of processing PFC and apparatus for processing PFCSEIKO EPSON CORP·Filed 2001·Granted Jan 4, 2005·3 cites·20 claims
- 1748US7067813B2Infrared absorption measurement method, infrared absorption measurement device, and method of manufacturing semiconductor deviceSEIKO EPSON CORP·Filed 2004·Granted Jun 27, 2006·0 cites·11 claims
- 1848US5332464ASemiconductor device manfuacturing apparatusSEIKO EPSON CORP·Filed 1993·Granted Jul 26, 1994·16 cites·1 claims
- 1948US5206535ASemiconductor device structureSEIKO EPSON CORP·Filed 1990·Granted Apr 27, 1993·19 cites·13 claims
- 2048US2004154745A1Method of processing PFC and apparatus for processing PFCFiled 2004·Application pending·0 cites
- 2146US2009121989A1Active matrix device, electrooptic display, and electronic apparatusSEIKO EPSON CORP·Filed 2008·Application pending·0 cites
- 2242US7037843B2Plasma etching methodSEIKO EPSON CORP·Filed 2003·Granted May 2, 2006·0 cites·3 claims
- 2342US2004229419A1Gas processing device and method of fabricating a semiconductor deviceSEIKO EPSON CORP·Filed 2004·Application pending·0 cites
- 2440US8223285B2Active matrix device, method for manufacturing switching element, electro-optical display device, and electronic apparatusNAMOSE ISAMU·Filed 2008·Granted Jul 17, 2012·0 cites·11 claims
- 2540US6649530B2Plasma etching at reduced pressureSEIKO EPSON CORP·Filed 2001·Granted Nov 18, 2003·0 cites·8 claims
- 2639US5520770AMethod of fabricating semiconductor deviceSEIKO EPSON CORP·Filed 1991·Granted May 28, 1996·10 cites·18 claims
- 2730US5348910AMethod of manufacturing a semiconductor device and the product therebySEIKO EPSON CORP·Filed 1992·Granted Sep 20, 1994·3 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →