Inventor · disambiguated record
Itaru Gunjishima
Also filed as: GUNJISHIMA ITARU
10 granted patents·27 citations·filing 2004–2016
82Inventor score
Top patents by PatentIndex Score
10 records- 0185US9048102B2SiC single crystal, SiC wafer, and semiconductor deviceTOYOTA CHUO KENKYUSHO KK·Filed 2012·Granted Jun 2, 2015·2 cites·17 claims
- 0277US10236338B2SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production methodSHOWA DENKO KK·Filed 2016·Granted Mar 19, 2019·1 cites·19 claims
- 0367US10125435B2SiC single crystal, SiC wafer, SiC substrate, and SiC deviceTOYOTA CHUO KENKYUSHO KK·Filed 2014·Granted Nov 13, 2018·0 cites·14 claims
- 0467US8936682B2Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defectsURAKAMI YASUSHI·Filed 2011·Granted Jan 20, 2015·3 cites·18 claims
- 0563US7135074B2Method for manufacturing silicon carbide single crystal from dislocation control seed crystalDENSO CORP·Filed 2004·Granted Nov 14, 2006·19 cites·27 claims
- 0662US9166008B2SiC single crystal, SiC wafer, and semiconductor deviceGUNJISHIMA ITARU·Filed 2012·Granted Oct 20, 2015·2 cites·12 claims
- 0751US9534317B2Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystalTOYOTA CHUO KENKYUSHO KK·Filed 2013·Granted Jan 3, 2017·0 cites·10 claims
- 0845US9145622B2Manufacturing method of silicon carbide single crystalURAKAMI YASUSHI·Filed 2011·Granted Sep 29, 2015·0 cites·13 claims
- 0936US9051663B2Manufacturing method of silicon carbide single crystalURAKAMI YASUSHI·Filed 2011·Granted Jun 9, 2015·0 cites·14 claims
- 1035US9096947B2SiC single crystal, production method therefor, SiC wafer and semiconductor deviceGUNJISHIMA ITARU·Filed 2012·Granted Aug 4, 2015·0 cites·34 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →