Inventor · disambiguated record
Izumi Nakayama
Also filed as: NAKAYAMA IZUMI
10 granted patents·1 pending application·483 citations·filing 1987–2011
93Inventor score
Files withULVAC CORP6NAKAYAMA IZUMI1NIHON SINKU GIJUTSU KABUSHIKI1NIHON SINKU GIJUTSU KABUSIKI K1ULVAC TECHNOLOGIES INC1
Top patents by PatentIndex Score
11 records- 0183US4800105AMethod of forming a thin film by chemical vapor depositionULVAC CORP·Filed 1987·Granted Jan 24, 1989·47 cites·8 claims
- 0282US4994301AACVD (chemical vapor deposition) method for selectively depositing metal on a substrateNIHON SINKU GIJUTSU KABUSIKI K·Filed 1987·Granted Feb 19, 1991·45 cites·24 claims
- 0381US4924807AApparatus for chemical vapor depositionULVAC CORP·Filed 1987·Granted May 15, 1990·62 cites·28 claims
- 0480US5795831ACold processes for cleaning and stripping photoresist from surfaces of semiconductor wafersULVAC TECHNOLOGIES INC·Filed 1996·Granted Aug 18, 1998·67 cites·18 claims
- 0578US5244501AApparatus for chemical vapor depositionULVAC CORP·Filed 1991·Granted Sep 14, 1993·65 cites·29 claims
- 0677US5851589AMethod for thermal chemical vapor depositionULVAC CORP·Filed 1994·Granted Dec 22, 1998·41 cites·4 claims
- 0777US4902531AVacuum processing method and apparatusULVAC CORP·Filed 1987·Granted Feb 20, 1990·45 cites·6 claims
- 0871US4849260AMethod for selectively depositing metal on a substrateNIHON SINKU GIJUTSU KABUSHIKI·Filed 1987·Granted Jul 18, 1989·41 cites·20 claims
- 0970US5953629AMethod of thin film forming on semiconductor substrateVACUUM METALLURG CO LTD·Filed 1996·Granted Sep 14, 1999·43 cites·6 claims
- 1063US5125360AVacuum processing apparatusULVAC CORP·Filed 1989·Granted Jun 30, 1992·27 cites·15 claims
- 1143US2013064730A1Gas abatement systemNAKAYAMA IZUMI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →