Inventor · disambiguated record
Jaeyoung Ahn
Also filed as: AHN JAEYOUNG
22 granted patents·5 pending applications·144 citations·filing 2010–2022
94Inventor score
Top patents by PatentIndex Score
27 records- 0195US9130054B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 8, 2015·29 cites·15 claims
- 0294US9536897B2Semiconductor device and method of fabricating the sameYOO DONGCHUL·Filed 2015·Granted Jan 3, 2017·36 cites·19 claims
- 0392US9653565B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·13 cites·5 claims
- 0490US10395982B2Three-dimensional semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 27, 2019·6 cites·20 claims
- 0589US9177613B2Semiconductor deviceLEE WOOKHYOUNG·Filed 2013·Granted Nov 3, 2015·13 cites·20 claims
- 0688US10263006B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 16, 2019·5 cites·19 claims
- 0788US9917094B2Semiconductor device having staggered pillarsLEE WOOKHYOUNG·Filed 2015·Granted Mar 13, 2018·7 cites·7 claims
- 0887US10727115B2Three-dimensional semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 28, 2020·4 cites·20 claims
- 0987US9515086B2Semiconductor device, electronic device, and method of fabricating the sameYON GUKHYON·Filed 2015·Granted Dec 6, 2016·6 cites·18 claims
- 1081US9437607B2Semiconductor device and method of manufacturing the samePARK KWANGMIN·Filed 2013·Granted Sep 6, 2016·8 cites·15 claims
- 1180US8598647B2Three-dimensional semiconductor memory devicesKIM DONGWOO·Filed 2011·Granted Dec 3, 2013·6 cites·14 claims
- 1277US10103170B2Semiconductor device having a vertical pillar connected to the substrateSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 16, 2018·2 cites·20 claims
- 1374US10396094B2Three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 27, 2019·1 cites·20 claims
- 1474US8765538B2Three dimensional semiconductor memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 1, 2014·3 cites·4 claims
- 1573US9490371B2Nonvolatile memory devices and methods of fabricating the sameNOH YOUNG-JIN·Filed 2014·Granted Nov 8, 2016·4 cites·20 claims
- 1670US9960046B2Methods of manufacturing semiconductor device having a blocking insulation layerKIM JUNG HO·Filed 2017·Granted May 1, 2018·1 cites·20 claims
- 1769US11282856B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 22, 2022·0 cites·8 claims
- 1869US2022139956A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1960US10892278B2Three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 12, 2021·0 cites·6 claims
- 2058US10651191B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 12, 2020·0 cites·10 claims
- 2155US2019206886A1Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 2250US10109747B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 23, 2018·0 cites·19 claims
- 2342US10950612B2Three dimensional semiconductor memory with residual memory layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 16, 2021·0 cites·20 claims
- 2441US8575682B2Three dimensional semiconductor memory devices and methods of forming the sameKIM BIO·Filed 2011·Granted Nov 5, 2013·0 cites·8 claims
- 2535US2011049610A1Nonvolatile memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2633US2012104485A1Nonvolatile Memory Devices And Methods Of Manufacturing The SameYANG JUNKYU·Filed 2011·Application pending·0 cites
- 2732US2013134492A1Semiconductor memory devices and methods for fabricating the sameYANG JUNKYU·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →