Inventor · disambiguated record
Jayant Ashokkumar
Also filed as: ASHOKKUMAR JAYANT
16 granted patents·1 pending application·126 citations·filing 2006–2022
91Inventor score
Files withCYPRESS SEMICONDUCTOR CORP13ALLAN JAMES D2Infineon Technologies LLC1TIYYAGURA SRIKANTH REDDY1
Top patents by PatentIndex Score
17 records- 0194US10074422B12T1C ferro-electric random access memory cellCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Sep 11, 2018·25 cites·20 claims
- 0293US9514816B1Non-volatile static RAM and method of operation thereofCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Dec 6, 2016·20 cites·20 claims
- 0389US7518916B2Method and apparatus to program both sides of a non-volatile static random access memoryCYPRESS SEMICONDUCTOR CORP·Filed 2006·Granted Apr 14, 2009·25 cites·3 claims
- 0488US7539054B2Method and apparatus to program and erase a non-volatile static random access memory from the bit linesCYPRESS SEMICONDUCTOR CORP·Filed 2006·Granted May 26, 2009·22 cites·2 claims
- 0587US7505303B2Method and apparatus to create an erase disturb on a non-volatile static random access memory cellCYPRESS SEMICONDUCTOR CORP·Filed 2006·Granted Mar 17, 2009·20 cites·3 claims
- 0681US12228594B2Glitch free brown out detectorInfineon Technologies LLC·Filed 2022·Granted Feb 18, 2025·1 cites·22 claims
- 0780US8315096B2Method and apparatus to implement a reset function in a non-volatile static random access memoryALLAN JAMES D·Filed 2011·Granted Nov 20, 2012·8 cites·20 claims
- 0879US9438240B1Biasing circuit for level shifter with isolationCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Sep 6, 2016·5 cites·20 claims
- 0949US10254812B1Low inrush circuit for power up and deep power down exitCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Apr 9, 2019·0 cites·19 claims
- 1046US10332596B22T1C ferro-electric random access memory cellCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Jun 25, 2019·0 cites·20 claims
- 1143US9866216B1Biasing circuit for level shifter with isolationCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Jan 9, 2018·0 cites·20 claims
- 1241US9997237B210-transistor non-volatile static random-access memory using a single non-volatile memory element and method of operation thereofCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jun 12, 2018·0 cites·19 claims
- 1341US8559262B2Capacitor power source tamper protection and reliability testTIYYAGURA SRIKANTH REDDY·Filed 2011·Granted Oct 15, 2013·0 cites·21 claims
- 1439US9646694B210-transistor non-volatile static random-access memory using a single non-volatile memory element and method of operation thereofCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted May 9, 2017·0 cites·16 claims
- 1534US2008151654A1Method and apparatus to implement a reset function in a non-volatile static random access memoryALLAN JAMES D·Filed 2006·Application pending·0 cites
- 1633US9607695B1Multi-bit non-volatile random-access memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Mar 28, 2017·0 cites·18 claims
- 1732US9620225B2Split voltage non-volatile latch cellCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Apr 11, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →