Inventor · disambiguated record
James A. Benjamin
Also filed as: BENJAMIN JAMES A · BENJAMIN JR JAMES
41 granted patents·1 pending application·981 citations·filing 1974–2008
98Inventor score
Files withEATON CORP32RAYTHEON CO3BAE SYSTEMS AEROSPACE INC1GANZ BRIAN L1MARCONI AEROSPACE SYSTEMS INC1
Top patents by PatentIndex Score
42 records- 0191US4541001ABidirectional power FET with substrate-referenced shieldEATON CORP·Filed 1982·Granted Sep 10, 1985·64 cites·19 claims
- 0291US3936864AMicrowave transistor packageRAYTHEON CO·Filed 1974·Granted Feb 3, 1976·43 cites·10 claims
- 0385US4670064AGenerating high purity ions by non-thermal excimer laser processingEATON CORP·Filed 1985·Granted Jun 2, 1987·34 cites·3 claims
- 0483US4546367ALateral bidirectional notch FET with extended gate insulatorEATON CORP·Filed 1982·Granted Oct 8, 1985·56 cites·10 claims
- 0581US7815865B2Liquid dispensing deviceRIGAKU AUTOMATION INC·Filed 2008·Granted Oct 19, 2010·12 cites·21 claims
- 0681US7352889B2Automated storage and retrieval device and methodGANZ BRIAN L·Filed 2003·Granted Apr 1, 2008·22 cites·46 claims
- 0780US4668304ADopant gettering semiconductor processing by excimer laserEATON CORP·Filed 1985·Granted May 26, 1987·53 cites·7 claims
- 0880US4574209ASplit gate EFET and circuitryEATON CORP·Filed 1982·Granted Mar 4, 1986·34 cites·6 claims
- 0979US5999139ATwo-axis satellite antenna mounting and tracking assemblyMARCONI AEROSPACE SYSTEMS INC·Filed 1997·Granted Dec 7, 1999·76 cites·8 claims
- 1079US4574208ARaised split gate EFET and circuitryEATON CORP·Filed 1982·Granted Mar 4, 1986·32 cites·7 claims
- 1176US4685976AMulti-layer semiconductor processing with scavenging between layers by excimer laserEATON CORP·Filed 1985·Granted Aug 11, 1987·47 cites·12 claims
- 1275US4553151ABidirectional power FET with field shapingEATON CORP·Filed 1982·Granted Nov 12, 1985·27 cites·19 claims
- 1374US6415140B1Null elimination in a space diversity antenna systemBAE SYSTEMS AEROSPACE INC·Filed 2000·Granted Jul 2, 2002·32 cites·11 claims
- 1472US4655849ASemiconductor processing technique for generating dangling surface bonds and growing epitaxial layer by excimer laserEATON CORP·Filed 1985·Granted Apr 7, 1987·40 cites·13 claims
- 1572US4577052AAC Solar cellEATON CORP·Filed 1982·Granted Mar 18, 1986·28 cites·4 claims
- 1671US4670063ASemiconductor processing technique with differentially fluxed radiation at incremental thicknessesEATON CORP·Filed 1985·Granted Jun 2, 1987·39 cites·2 claims
- 1771US4622568APlanar field-shaped bidirectional power FETEATON CORP·Filed 1984·Granted Nov 11, 1986·23 cites·19 claims
- 1870US4622569ALateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal meansEATON CORP·Filed 1984·Granted Nov 11, 1986·23 cites·4 claims
- 1969US4571606AHigh density, high voltage power FETEATON CORP·Filed 1982·Granted Feb 18, 1986·22 cites·5 claims
- 2068US4571513ALateral bidirectional dual notch shielded FETEATON CORP·Filed 1982·Granted Feb 18, 1986·21 cites·7 claims
- 2168US4542396ATrapped charge bidirectional power FETEATON CORP·Filed 1982·Granted Sep 17, 1985·20 cites·20 claims
- 2268US4107720AOverlay metallization multi-channel high frequency field effect transistorRAYTHEON CO·Filed 1976·Granted Aug 15, 1978·25 cites·30 claims
- 2365US4612465ALateral bidirectional notch FET with gates at non-common potentialsEATON CORP·Filed 1985·Granted Sep 16, 1986·33 cites·3 claims
- 2464US4670764AMulti-channel power JFET with buried field shaping regionsEATON CORP·Filed 1986·Granted Jun 2, 1987·22 cites·3 claims
- 2563US6668414B1Scuff marker removal toolFiled 2001·Granted Dec 30, 2003·10 cites·4 claims
- 2662US4574207ALateral bidirectional dual notch FET with non-planar main electrodesEATON CORP·Filed 1982·Granted Mar 4, 1986·17 cites·20 claims
- 2762US4571512ALateral bidirectional shielded notch FETEATON CORP·Filed 1982·Granted Feb 18, 1986·17 cites·11 claims
- 2858US4511818APiezoelectric generator driven by a combustion engineEATON CORP·Filed 1982·Granted Apr 16, 1985·12 cites·3 claims
- 2958US4016643AOverlay metallization field effect transistorRAYTHEON CO·Filed 1976·Granted Apr 12, 1977·18 cites·4 claims
- 3053US4533783AAC solar cell with alternately generated pn junctionsEATON CORP·Filed 1984·Granted Aug 6, 1985·13 cites·10 claims
- 3150US6503320B1Remote-control, crystal-annealing, cold-stream blocking device and methodSTRUCTURAL GENOMIX INC·Filed 2001·Granted Jan 7, 2003·6 cites·26 claims
- 3250US4577208ABidirectional power FET with integral avalanche protectionEATON CORP·Filed 1982·Granted Mar 18, 1986·14 cites·19 claims
- 3347US4633281ADual stack power JFET with buried field shaping depletion regionsEATON CORP·Filed 1984·Granted Dec 30, 1986·9 cites·3 claims
- 3446US4459181ASemiconductor pattern definition by selective anodizationEATON CORP·Filed 1982·Granted Jul 10, 1984·11 cites·7 claims
- 3545US4558243ABidirectional power FET with shorting-channel off stateEATON CORP·Filed 1984·Granted Dec 10, 1985·8 cites·8 claims
- 3638US4675980AMethod for making vertically layered MOMOM tunnel deviceEATON CORP·Filed 1986·Granted Jun 30, 1987·5 cites·7 claims
- 3737US4642665AVertically layered MOMOM tunnel deviceEATON CORP·Filed 1984·Granted Feb 10, 1987·4 cites·9 claims
- 3836US4635084ASplit row power JFETEATON CORP·Filed 1984·Granted Jan 6, 1987·4 cites·3 claims
- 3934US2005200408A1Method and apparatus for feed forward linearization of wideband RF amplifiersFiled 2004·Application pending·0 cites
- 4033US4633278AHorizontally layered MOMOM notch tunnel deviceEATON CORP·Filed 1984·Granted Dec 30, 1986·2 cites·9 claims
- 4132US4675979AMethod for making horizontally layered momom tunnel deviceEATON CORP·Filed 1986·Granted Jun 30, 1987·3 cites·5 claims
- 4230US4624533ASolid state displayEATON CORP·Filed 1983·Granted Nov 25, 1986·0 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →