Inventor · disambiguated record
James Joseph Chambers
Also filed as: CHAMBERS JAMES J · CHAMBERS JAMES JOSEPH
69 granted patents·17 pending applications·1,454 citations·filing 2001–2017
99Inventor score
Top patents by PatentIndex Score
86 records- 0198US6936508B2Metal gate MOS transistors and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 30, 2005·173 cites·30 claims
- 0297US7229873B2Process for manufacturing dual work function metal gates in a microelectronics deviceTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 12, 2007·71 cites·23 claims
- 0397US6852645B2High temperature interface layer growth for high-k gate dielectricTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 8, 2005·130 cites·28 claims
- 0495US6750126B1Methods for sputter deposition of high-k dielectric filmsTEXAS INSTRUMENTS INC·Filed 2003·Granted Jun 15, 2004·83 cites·52 claims
- 0594US7226830B2Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS dielectric formationTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 5, 2007·33 cites·24 claims
- 0694US7135361B2Method for fabricating transistor gate structures and gate dielectrics thereofTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 14, 2006·62 cites·40 claims
- 0793US7176076B2Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materialsTEXAS INSTRUMENTS INC·Filed 2005·Granted Feb 13, 2007·40 cites·11 claims
- 0893US6946377B2Multiple-gate MOSFET device with lithography independent silicon body thickness and methods for fabricating the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 20, 2005·61 cites·12 claims
- 0993US6521911B2High dielectric constant metal silicates formed by controlled metal-surface reactionsUNIV NORTH CAROLINA STATE·Filed 2001·Granted Feb 18, 2003·166 cites·40 claims
- 1092US7351632B2Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of siliconTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 1, 2008·24 cites·24 claims
- 1192US6809370B1High-k gate dielectric with uniform nitrogen profile and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 26, 2004·81 cites·15 claims
- 1292US6762114B1Methods for transistor gate fabrication and for reducing high-k gate dielectric roughnessTEXAS INSTRUMENTS INC·Filed 2002·Granted Jul 13, 2004·66 cites·18 claims
- 1392US6656852B2Method for the selective removal of high-k dielectricsTEXAS INSTRUMENTS INC·Filed 2001·Granted Dec 2, 2003·62 cites·23 claims
- 1492US6503846B1Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gatesTEXAS INSTRUMENTS INC·Filed 2001·Granted Jan 7, 2003·64 cites·13 claims
- 1591US8643113B2Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layerCHAMBERS JAMES JOSEPH·Filed 2008·Granted Feb 4, 2014·14 cites·8 claims
- 1690US7612422B2Structure for dual work function metal gate electrodes by control of interface dipolesTEXAS INSTRUMENTS INC·Filed 2006·Granted Nov 3, 2009·19 cites·17 claims
- 1790US6979623B2Method for fabricating split gate transistor device having high-k dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 27, 2005·52 cites·17 claims
- 1889US9087918B2Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layerTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 21, 2015·6 cites·42 claims
- 1989US7115530B2Top surface roughness reduction of high-k dielectric materials using plasma based processesTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 3, 2006·40 cites·24 claims
- 2088US9397009B2Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layerTEXAS INSTRUMENTS INC·Filed 2015·Granted Jul 19, 2016·4 cites·19 claims
- 2187US9202884B2Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budgetNIIMI HIROAKI·Filed 2011·Granted Dec 1, 2015·6 cites·11 claims
- 2283US8062966B2Method for integration of replacement gate in CMOS flowMEHRAD FREIDO·Filed 2009·Granted Nov 22, 2011·19 cites·20 claims
- 2381US8536654B2Structure and method for dual work function metal gate CMOS with selective cappingCHAMBERS JAMES JOSEPH·Filed 2011·Granted Sep 17, 2013·5 cites·17 claims
- 2481US7601577B2Work function control of metalsTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 13, 2009·7 cites·10 claims
- 2581US7470577B2Dual work function CMOS devices utilizing carbide based electrodesTEXAS INSTRUMENTS INC·Filed 2005·Granted Dec 30, 2008·7 cites·5 claims
- 2681US7291527B2Work function control of metalsTEXAS INSTRUMENTS INC·Filed 2005·Granted Nov 6, 2007·8 cites·7 claims
- 2780US7960802B2Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budgetTEXAS INSTRUMENTS INC·Filed 2009·Granted Jun 14, 2011·4 cites·10 claims
- 2878US7560792B2Reliable high voltage gate dielectric layers using a dual nitridation processTEXAS INSTRUMENTS INC·Filed 2007·Granted Jul 14, 2009·5 cites·4 claims
- 2977US7528024B2Dual work function metal gate integration in semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2004·Granted May 5, 2009·21 cites·15 claims
- 3076US7005365B2Structure and method to fabricate self-aligned transistors with dual work function metal gate electrodesTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 28, 2006·20 cites·6 claims
- 3175US7098516B2Refractory metal-based electrodes for work function setting in semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 29, 2006·14 cites·8 claims
- 3274US7067434B2Hydrogen free integration of high-k gate dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted Jun 27, 2006·16 cites·24 claims
- 3370US6780719B2Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixturesTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 24, 2004·13 cites·12 claims
- 3469US7723173B2Low temperature polysilicon oxide process for high-K dielectric/metal gate stackTEXAS INSTRUMENTS INC·Filed 2009·Granted May 25, 2010·2 cites·20 claims
- 3568US8389391B2Triple-gate transistor with reverse shallow trench isolationCHAMBERS JAMES J·Filed 2010·Granted Mar 5, 2013·3 cites·17 claims
- 3666US8450221B2Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewallsKIRKPATRICK BRIAN K·Filed 2010·Granted May 28, 2013·2 cites·11 claims
- 3766US7321154B2Refractory metal-based electrodes for work function setting in semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2006·Granted Jan 22, 2008·2 cites·6 claims
- 3865US7601578B2Defect control in gate dielectricsTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 13, 2009·1 cites·16 claims
- 3964US9431509B2High-K metal gateTEXAS INSTRUMENTS INC·Filed 2013·Granted Aug 30, 2016·1 cites·20 claims
- 4064US7678675B2Structure and method for a triple-gate transistor with reverse STITEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 16, 2010·2 cites·10 claims
- 4164US7026218B2Use of indium to define work function of p-type doped polysiliconTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 11, 2006·9 cites·16 claims
- 4263US7625807B2Methods and systems to mitigate etch stop clipping for shallow trench isolation fabricationTEXAS INSTRUMENTS INC·Filed 2007·Granted Dec 1, 2009·2 cites·7 claims
- 4363US6828200B2Multistage deposition that incorporates nitrogen via an intermediate stepTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 7, 2004·8 cites·14 claims
- 4461US10439040B2Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budgetTEXAS INSTRUMENTS INC·Filed 2017·Granted Oct 8, 2019·0 cites·18 claims
- 4561US6969644B1Versatile system for triple-gated transistors with engineered cornersTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 29, 2005·7 cites·11 claims
- 4660US8441078B2Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrationsCHAMBERS JAMES JOSEPH·Filed 2010·Granted May 14, 2013·1 cites·2 claims
- 4758US9721796B2Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budgetTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 1, 2017·0 cites·14 claims
- 4858US7183165B2Reliable high voltage gate dielectric layers using a dual nitridation processTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 27, 2007·5 cites·6 claims
- 4957US7351626B2Method for controlling defects in gate dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 1, 2008·4 cites·9 claims
- 5055US10068983B2High-K metal gateTEXAS INSTRUMENTS INC·Filed 2016·Granted Sep 4, 2018·0 cites·20 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →