Inventor · disambiguated record
Jae-Hyoung Choi
Also filed as: CHOI JAE H · CHOI JAE W · CHOI JAE-HYOUNG
42 granted patents·20 pending applications·255 citations·filing 1990–2022
97Inventor score
Top patents by PatentIndex Score
62 records- 0198US7482677B2Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·88 cites·7 claims
- 0293US9978753B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 22, 2018·9 cites·18 claims
- 0392US10636795B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 28, 2020·7 cites·20 claims
- 0491US7723770B2Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 25, 2010·15 cites·21 claims
- 0589US9893142B2Method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 13, 2018·6 cites·18 claims
- 0688US8859383B2Method of fabricating semiconductor device having dielectric layer with improved electrical characteristicsKIM YOUN-SOO·Filed 2012·Granted Oct 14, 2014·7 cites·19 claims
- 0783US7442604B2Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric filmsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·8 cites·32 claims
- 0882US8790986B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 29, 2014·7 cites·16 claims
- 0982US8012823B2Methods of fabricating stack type capacitors of semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·8 cites·19 claims
- 1081US7973352B2Capacitors having composite dielectric layers containing crystallization inhibiting regionsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 5, 2011·4 cites·11 claims
- 1181US7655519B2Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 2, 2010·9 cites·19 claims
- 1280US10297600B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 21, 2019·2 cites·19 claims
- 1380US9324781B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 26, 2016·2 cites·20 claims
- 1480US9059331B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 16, 2015·3 cites·15 claims
- 1579US9923047B2Method for manufacturing a capacitor for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 20, 2018·3 cites·19 claims
- 1679US7482242B2Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·8 cites·4 claims
- 1778US7425761B2Method of manufacturing a dielectric film in a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 16, 2008·6 cites·20 claims
- 1876US8685494B2ALD method of forming thin film comprising a metalLIM JAE-SOON·Filed 2011·Granted Apr 1, 2014·2 cites·15 claims
- 1976US7314806B2Methods of forming metal-insulator-metal (MIM) capacitors with separate seedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 1, 2008·5 cites·18 claims
- 2073US11177263B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 16, 2021·0 cites·20 claims
- 2171US9685498B2Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·1 cites·9 claims
- 2269US8357613B2Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealingSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 22, 2013·6 cites·13 claims
- 2368US7495292B2Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 24, 2009·3 cites·22 claims
- 2466US9059330B2Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regionsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jun 16, 2015·1 cites·21 claims
- 2566US7422943B2Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 9, 2008·3 cites·21 claims
- 2665US7172946B2Methods for forming semiconductor devices including thermal processingSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 6, 2007·10 cites·27 claims
- 2764US7442981B2Capacitor of semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 28, 2008·4 cites·23 claims
- 2862US7179739B2Methods of forming a semiconductor device including a metal silicide layer between a conductive plug and a bottom electrode of a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 20, 2007·10 cites·21 claims
- 2959US6995071B2Methods of forming MIM type capacitor structures using low temperature plasma processingSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 7, 2006·6 cites·15 claims
- 3057US8563085B2Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitorCHO YOUN-JOUNG·Filed 2011·Granted Oct 22, 2013·1 cites·14 claims
- 3157US2010200950A1Semiconductor device having dielectric layer with improved electrical characteristics and associated methodsKIM YOUN-SOO·Filed 2009·Application pending·0 cites
- 3256US9685450B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·0 cites·12 claims
- 3356US2015031186A1Method of fabricating semiconductor device having dielectric layer with improved electrical characteristicsKIM YOUN-SOO·Filed 2014·Application pending·0 cites
- 3455US7205219B2Methods of forming integrated circuits devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 17, 2007·5 cites·19 claims
- 3553US7304367B2Metal-insulator-metal capacitors including transition metal silicide films on doped polysilicon contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 4, 2007·6 cites·9 claims
- 3653US2010117194A1Metal-insulator-metal capacitors with a chemical barrier layer in a lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3752US8344439B2Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·0 cites·15 claims
- 3849US9412583B2Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the sameKANG SANG-YEOL·Filed 2012·Granted Aug 9, 2016·0 cites·15 claims
- 3949US2023061185A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4048US7335550B2Methods for forming semiconductor devices including thermal processingSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 26, 2008·0 cites·49 claims
- 4148US2009258470A1Method of Manufacturing a Semiconductor Device Using an Atomic Layer Deposition ProcessSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4247US2011073832A1Phase-change memory deviceLIM HYUN-SEOK·Filed 2010·Application pending·0 cites
- 4346US7648874B2Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 19, 2010·0 cites·30 claims
- 4445US9349583B2Method of fabricating semiconductor devicePARK MIN-YOUNG·Filed 2013·Granted May 24, 2016·0 cites·28 claims
- 4545US2009309187A1Semiconductor Device and Method of Fabricating the SameCHOI JAE-HYOUNG·Filed 2009·Application pending·0 cites
- 4644US2009130457A1Dielectric structureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4743US10829881B2Door lock device for washing machine and method of locking washing machine doorSCD CO LTD·Filed 2016·Granted Nov 10, 2020·0 cites·13 claims
- 4843US7338863B2Semiconductor memory device and method of manufacturing the semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 4, 2008·0 cites·12 claims
- 4943US2007026625A1Method of fabricating metal-insulator-metal capacitorCHUNG JUNG-HEE·Filed 2006·Application pending·0 cites
- 5042US2010047988A1Methods of forming a layer, methods of forming a gate structure and methods of forming a capacitorCHO YOUN-JOUNG·Filed 2009·Application pending·0 cites
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →