Semiconductor device having dielectric layer with improved electrical characteristics and associated methods

Abstract

A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film.

1 . A semiconductor device, comprising:
 a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate; and   an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer,   wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film.   
     
     
         2 . The semiconductor device as claimed in  claim 1 , wherein the insertion layer is disposed between the dielectric layer and the lower metal layer. 
     
     
         3 . The semiconductor device as claimed in  claim 1 , wherein the insertion layer is disposed between the dielectric layer and the upper metal layer. 
     
     
         4 . The semiconductor device as claimed in  claim 1 , wherein the insertion layer is disposed between the dielectric layer and the lower metal layer and between the dielectric layer and the upper metal layer. 
     
     
         5 . The semiconductor device as claimed in  claim 1 , wherein the metal oxide film and the metallic material film each independently include at least one of Li, Be, B, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Pb, Bi, Po, Fr, Ra, and Ac. 
     
     
         6 . The semiconductor device as claimed in  claim 5 , wherein the metal oxide film is in the form of MO x , wherein M is a metal, O is oxygen, and x is about 0.5 to about 4. 
     
     
         7 . The semiconductor device as claimed in  claim 1 , wherein a metal used to form the metallic material film of the insertion layer is the same as a metal used to form the metal oxide film of the dielectric layer. 
     
     
         8 . The semiconductor device as claimed in  claim 1 , wherein the metallic material film of the insertion layer is a metal oxide film. 
     
     
         9 . The semiconductor device as claimed in  claim 1 , wherein the metallic material film of the insertion layer is a metal nitride film. 
     
     
         10 - 17 . (canceled)