Inventor · disambiguated record
Jae-Soon Lim
Also filed as: LIM JAE-SOON
33 granted patents·16 pending applications·496 citations·filing 2000–2019
97Inventor score
Top patents by PatentIndex Score
49 records- 0197US6576053B1Method of forming thin film using atomic layer deposition methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 10, 2003·297 cites·32 claims
- 0294US7271055B2Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·26 cites·31 claims
- 0388US10134582B2Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·10 claims
- 0488US8859383B2Method of fabricating semiconductor device having dielectric layer with improved electrical characteristicsKIM YOUN-SOO·Filed 2012·Granted Oct 14, 2014·7 cites·19 claims
- 0585US7722926B2Organometallic compounds and methods of forming thin films including the use of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 25, 2010·6 cites·19 claims
- 0685US6570253B1Multi-layer film for a thin film structure and a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 27, 2003·30 cites·13 claims
- 0784US7354821B2Methods of fabricating trench capacitors with insulating layer collars in undercut regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 8, 2008·10 cites·29 claims
- 0884US6599807B2Method for manufacturing capacitor of semiconductor device having improved leakage current characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 29, 2003·33 cites·17 claims
- 0978US10913754B2Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compoundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·2 cites·15 claims
- 1078US10259836B2Methods of forming thin film and fabricating integrated circuit device using niobium compoundSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 16, 2019·3 cites·20 claims
- 1177US7396719B2Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 8, 2008·18 cites·4 claims
- 1276US8685494B2ALD method of forming thin film comprising a metalLIM JAE-SOON·Filed 2011·Granted Apr 1, 2014·2 cites·15 claims
- 1375US10224200B2Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·2 cites·8 claims
- 1474US10882873B2Method of forming tin-containing material film and method of synthesizing a tin compoundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 5, 2021·0 cites·12 claims
- 1574US7361548B2Methods of forming a capacitor using an atomic layer deposition processSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·4 cites·22 claims
- 1672US7144771B2Methods of forming electronic devices including dielectric layers with different densities of titaniumSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 5, 2006·12 cites·32 claims
- 1772US6448146B1Methods of manufacturing integrated circuit capacitors having hemispherical grain electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 10, 2002·17 cites·16 claims
- 1871US9685498B2Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·1 cites·9 claims
- 1970US10242877B2Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 26, 2019·1 cites·16 claims
- 2069US10468264B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 5, 2019·1 cites·14 claims
- 2168US7531861B2Trench capacitors with insulating layer collars in undercut regionsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 12, 2009·3 cites·2 claims
- 2267US10651031B2Tantalum compoundSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 12, 2020·0 cites·20 claims
- 2367US10329312B2Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 25, 2019·0 cites·16 claims
- 2467US6992346B2Integrated circuit devices with metal-insulator-metal capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 31, 2006·9 cites·28 claims
- 2566US7432183B2Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 7, 2008·3 cites·34 claims
- 2666US2018155372A1Tin compound, method of synthesizing the same, tin precursor compound for atomic layer deposition, and method of forming tin-containing material filmSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 2761US10752645B2Method of forming a thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 25, 2020·0 cites·9 claims
- 2859US11062940B2Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·18 claims
- 2957US2010200950A1Semiconductor device having dielectric layer with improved electrical characteristics and associated methodsKIM YOUN-SOO·Filed 2009·Application pending·0 cites
- 3056US2015031186A1Method of fabricating semiconductor device having dielectric layer with improved electrical characteristicsKIM YOUN-SOO·Filed 2014·Application pending·0 cites
- 3155US2009050210A1Methods for Operating Liquid Chemical Delivery Systems Having Recycling ElementsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3254US10361118B2Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 23, 2019·0 cites·7 claims
- 3353US7135422B2Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 14, 2006·4 cites·23 claims
- 3453US2008268653A1Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3551US2007040207A1Electronic devices including dielectric layers with different densities of titaniumNAM GAB-JIN·Filed 2006·Application pending·0 cites
- 3650US7052918B2Multi-layer film for thin film structure, capacitor using the same and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 30, 2006·2 cites·10 claims
- 3749US9412583B2Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the sameKANG SANG-YEOL·Filed 2012·Granted Aug 9, 2016·0 cites·15 claims
- 3848US2006060907A1Methods of forming integrated circuit devices with metal-insulator-metal capacitorsKIM KI-CHUL·Filed 2005·Application pending·0 cites
- 3947US10600643B2Method of forming thin film and method of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 24, 2020·0 cites·14 claims
- 4045US9349583B2Method of fabricating semiconductor devicePARK MIN-YOUNG·Filed 2013·Granted May 24, 2016·0 cites·28 claims
- 4143US2005031495A1Liquid chemical delivery system with recycling element and associated methodsFiled 2004·Application pending·0 cites
- 4243US2015091133A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 4338US2004166627A1Methods for forming a capacitor on an integrated circuit device at reduced temperaturesFiled 2003·Application pending·0 cites
- 4438US2011102968A1Multilayer structure, capacitor including the multilayer structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4537US2011136317A1Semiconductor device, method of fabricating the same, and semicondutor module, electronic circuit board, and electronic system including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4635US2010196592A1Methods of fabricating capacitors including low-temperature capping layersSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4733US2011095397A1Semiconductor Structures Including Dielectric Layers and Capacitors Including Semiconductor StructuresCHUNG SUK-JIN·Filed 2010·Application pending·0 cites
- 4833US2002195683A1Semiconductor device and method for manufacturing the sameFiled 2000·Application pending·0 cites
- 4930US2011151639A1Semiconductor device, method of fabricating the same, semiconductor module, electronic circuit board, and electronic system including the deviceLIM JAE-SOON·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →