Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film

Abstract

A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.

1 . A method of forming a high dielectric film on a semiconductor substrate using atomic layer deposition, the method comprising, in order:
 (a) supplying a first reaction source containing a first metal element into a reactor, and then purging the reactor;   (b) supplying a second reaction source containing a second metal element into the reactor, and then purging the reactor, the second metal element being different from the first metal element;   (c) supplying a third reaction source containing N into the reactor; and   (d) supplying an oxidizer into the reactor, and then purging the reactor.   
   
   
       2 . The method of  claim 1 , further comprising supplying the first reaction source into the reactor again, and purging the reactor again, after performing step (b). 
   
   
       3 . The method of  claim 1 , further comprising performing an annealing process to densify the high dielectric film after performing step (d). 
   
   
       4 . The method of  claim 3 , wherein the annealing process is performed in an atmosphere of one selected from the group consisting of O 2 , O 3 , N 2 O, Ar, N 2 , H 2 , He, NH 3 , and a combination thereof, at a temperature of room temperature to 600° C., under a pressure of about 0.1 to 760 Torr. 
   
   
       5 . The method of  claim 3 , wherein while the annealing process is being performed, additional energy is supplied using plasma, ozone, or a UV lamp. 
   
   
       6 . The method of  claim 1 , wherein each of the first and second metal elements is selected from the group consisting of Ta, Hf, Ti, Al, and La. 
   
   
       7 . The method of  claim 1 , wherein each of the first and second reaction sources is one of an organic metal and a metal halide. 
   
   
       8 . The method of  claim 7 , wherein the organic metal is one of metal alkoxide and metal β-diketonate. 
   
   
       9 . The method of  claim 1 , wherein the steps (a) through (d) form a single combination high dielectric film formed of a mixture of a first metal oxide containing the first metal element and a second metal oxide containing the second metal element, the mixture including N. 
   
   
       10 . The method of  claim 9 , wherein each of the first and second metal oxides is selected from the group consisting of tantalum oxide, hafnium oxide, titanium oxide, aluminum oxide, and lanthanum oxide. 
   
   
       11 . The method of  claim 1 , wherein the high dielectric film is formed at a temperature of about 100° C. to 700° C.