Inventor · disambiguated record
Jong Wan Kwon
Also filed as: KWON JONG WAN
2 granted patents·3 pending applications·22 citations·filing 2004–2025
59Inventor score
Top patents by PatentIndex Score
5 records- 0177US7396719B2Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 8, 2008·18 cites·4 claims
- 0258US2025273474A1Method and system for processing substrateSEMES CO LTD·Filed 2024·Application pending·0 cites
- 0353US7135422B2Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 14, 2006·4 cites·23 claims
- 0453US2008268653A1Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 0549US2025293040A1Substrate processing method and substrate processing apparatusSEMES CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →