Inventor · disambiguated record
James A. Cooper
Also filed as: COOPER JAMES · COOPER JAMES A · COOPER JAMES A JR · COOPER JAMES ALBERT
40 granted patents·16 pending applications·1,094 citations·filing 1974–2024
98Inventor score
Files withPURDUE RESEARCH FOUNDATION19BELL TELEPHONE LABOR INC5COOPER JAMES A5GLOBALFOUNDRIES US INC5APPLIED MATERIALS INC4
Top patents by PatentIndex Score
56 records- 0197US4324038AMethod of fabricating MOS field effect transistorsBELL TELEPHONE LABOR INC·Filed 1980·Granted Apr 13, 1982·128 cites·20 claims
- 0296US5465249ANonvolatile random access memory device having transistor and capacitor made in silicon carbide substrateCREE RESEARCH INC·Filed 1991·Granted Nov 7, 1995·151 cites·35 claims
- 0394US9780206B2Methods of reducing the electrical and thermal resistance of SiC substrates and devices made therebyPURDUE RESEARCH FOUNDATION·Filed 2016·Granted Oct 3, 2017·7 cites·9 claims
- 0494US9065264B2System for mounting an electrical fixture to an electrical junction boxCOOPER JAMES A·Filed 2012·Granted Jun 23, 2015·72 cites·19 claims
- 0593US8035112B1SIC power DMOSFET with self-aligned source contactPURDUE RESEARCH FOUNDATION·Filed 2009·Granted Oct 11, 2011·54 cites·16 claims
- 0693US6180958B1Structure for increasing the maximum voltage of silicon carbide power transistorsFiled 1997·Granted Jan 30, 2001·117 cites·31 claims
- 0792US10505035B2Methods of reducing the electrical and thermal resistance of SiC substrates and devices made therebyPURDUE RESEARCH FOUNDATION·Filed 2017·Granted Dec 10, 2019·5 cites·10 claims
- 0892US6902947B2Integrated method for release and passivation of MEMS structuresAPPLIED MATERIALS INC·Filed 2003·Granted Jun 7, 2005·89 cites·10 claims
- 0991US4208728AProgramable logic arrayBELL TELEPHONE LABOR INC·Filed 1978·Granted Jun 17, 1980·29 cites·6 claims
- 1090US5365477ADynamic random access memory deviceUS ARMY·Filed 1992·Granted Nov 15, 1994·114 cites·19 claims
- 1189US9997599B2MOS-based power semiconductor device having increased current carrying area and method of fabricating samePURDUE RESEARCH FOUNDATION·Filed 2014·Granted Jun 12, 2018·5 cites·20 claims
- 1289US8476697B1Short-channel silicon carbide power MOSFETCOOPER JAMES A·Filed 2012·Granted Jul 2, 2013·16 cites·8 claims
- 1389US7498633B2High-voltage power semiconductor devicePURDUE RESEARCH FOUNDATION·Filed 2006·Granted Mar 3, 2009·27 cites·15 claims
- 1489US6362495B1Dual-metal-trench silicon carbide Schottky pinch rectifierPURDUE RESEARCH FOUNDATION·Filed 1999·Granted Mar 26, 2002·90 cites·10 claims
- 1586US12484268B2MOS-based power semiconductor device having increased current carrying area and method of fabricating samePURDUE RESEARCH FOUNDATION·Filed 2024·Granted Nov 25, 2025·0 cites·15 claims
- 1686US8133789B1Short-channel silicon carbide power mosfetCOOPER JAMES A·Filed 2009·Granted Mar 13, 2012·14 cites·8 claims
- 1785US4715422AReinforcement of articles of cast metal or metal alloyAE PLC·Filed 1986·Granted Dec 29, 1987·23 cites·8 claims
- 1884US10208648B1Engine oil cooler backflush valve assemblyCOOPER JAMES A·Filed 2017·Granted Feb 19, 2019·3 cites·22 claims
- 1980US6830950B2Integrated method for release and passivation of MEMS structuresAPPLIED MATERIALS INC·Filed 2002·Granted Dec 14, 2004·27 cites·38 claims
- 2076US10403720B2MOS-based power semiconductor device having increased current carrying area and method of fabricating samePURDUE RESEARCH FOUNDATION·Filed 2018·Granted Sep 3, 2019·1 cites·17 claims
- 2175US12148825B2Methods of reducing the electrical and thermal resistance of SiC substrates and device made therebyPURDUE RESEARCH FOUNDATION·Filed 2020·Granted Nov 19, 2024·0 cites·19 claims
- 2275US11973114B2MOS-based power semiconductor device having increased current carrying area and method of fabricating samePURDUE RESEARCH FOUNDATION·Filed 2021·Granted Apr 30, 2024·0 cites·15 claims
- 2373US4841570AOne-way transformation of informationUS ENERGY·Filed 1987·Granted Jun 20, 1989·42 cites·22 claims
- 2470US6900133B2Method of etching variable depth features in a crystalline substrateAPPLIED MATERIALS INC·Filed 2002·Granted May 31, 2005·14 cites·21 claims
- 2570US3937985AApparatus and method for regenerating chargeBELL TELEPHONE LABOR INC·Filed 1974·Granted Feb 10, 1976·16 cites·25 claims
- 2669US4291247AMultistage logic circuit arrangementBELL TELEPHONE LABOR INC·Filed 1979·Granted Sep 22, 1981·12 cites·6 claims
- 2768US10879388B2Methods of reducing the electrical and thermal resistance of SiC substrates and device made therebyPURDUE RESEARCH FOUNDATION·Filed 2019·Granted Dec 29, 2020·0 cites·18 claims
- 2867US11728440B2Counter-doped silicon carbide Schottky barrier diodeSEMIQ INCORPORATED·Filed 2021·Granted Aug 15, 2023·0 cites·8 claims
- 2967US11631773B2Counter-doped silicon carbide Schottky barrier diodeSEMIQ INCORPORATED·Filed 2021·Granted Apr 18, 2023·0 cites·6 claims
- 3065US11145721B2MOS-based power semiconductor device having increased current carrying area and method of fabricating samePURDUE RESEARCH FOUNDATION·Filed 2019·Granted Oct 12, 2021·0 cites·17 claims
- 3163US11469333B1Counter-doped silicon carbide Schottky barrier diodeSEMIQ INCORPORATED·Filed 2020·Granted Oct 11, 2022·0 cites·5 claims
- 3260US2025048700A1Ultra-short channel lengths in sic mos-based power devices and method of making the samePURDUE RESEARCH FOUNDATION·Filed 2024·Application pending·0 cites
- 3360US2022384625A1Mos devices with increased short circuit robustnessPURDUE RESEARCH FOUNDATION·Filed 2022·Application pending·0 cites
- 3457US2024290617A1Field-effect transistors with a gate dielectric layer formed on a surface treated by atomic layer etchingGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 3557US2025063748A1Insulating-gate bipolar transistors including a reverse conducting diodeGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 3657US2024290879A1Field-effect transistors with deposited gate dielectric layersGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 3757US2024355872A1Transistors with field-shield contacts and base contactsGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 3855US12446270B2Junction field-effect transistors implemented in a wide bandgap semiconductor materialGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 14, 2025·0 cites·19 claims
- 3954US12284823B1Buried field shield in III-V compound semiconductor trench MOSFETs via etch and regrowthNAT TECH & ENG SOLUTIONS SANDIA LLC·Filed 2022·Granted Apr 22, 2025·0 cites·13 claims
- 4054US2024047531A1Power devices with improved on-resistancePURDUE RESEARCH FOUNDATION·Filed 2023·Application pending·0 cites
- 4153US4139907AIntegrated read only memoryBELL TELEPHONE LABOR INC·Filed 1977·Granted Feb 13, 1979·6 cites·6 claims
- 4252US6515302B1Power devices in wide bandgap semiconductorPURDUE RESEARCH FOUNDATION·Filed 2000·Granted Feb 4, 2003·6 cites·7 claims
- 4350US4635083AMemory devicePURDUE RESEARCH FOUNDATION·Filed 1986·Granted Jan 6, 1987·12 cites·10 claims
- 4448US2019386124A1Mos devices with increased short circuit robustnessPURDUE RESEARCH FOUNDATION·Filed 2019·Application pending·0 cites
- 4547US2024414868A1Thermally insulating and electrically conductive spacerGOOGLE LLC·Filed 2021·Application pending·0 cites
- 4645US8343841B2Method for fabricating a semiconductor devicePURDUE RESEARCH FOUNDATION·Filed 2010·Granted Jan 1, 2013·0 cites·18 claims
- 4744US2015085500A1Recessed mini-can lighting assemblyCANARM LTD·Filed 2014·Application pending·0 cites
- 4842US2007183138A1Express mount for electrical fixtureCANARM LTD·Filed 2006·Application pending·0 cites
- 4942US2019178482A1Flat panel light fixture mounting kit and methodCANARM LTD·Filed 2018·Application pending·0 cites
- 5041US2006194400A1Method for fabricating a semiconductor deviceCOOPER JAMES A·Filed 2006·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →