Inventor · disambiguated record
Jacek Lagowski
Also filed as: LAGOWSKI JACEK · LAGOWSKI JACEK J
27 granted patents·2 pending applications·1,144 citations·filing 1975–2024
97Inventor score
Files withSEMICONDUCTOR DIAGNOSTICS INC9SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD6RCA CORP3UNIV SOUTH FLORIDA3LAGOWSKI JACEK J2
Top patents by PatentIndex Score
29 records- 0196US6680621B2Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage currentSEMICONDUCTOR DIAGNOSTICS INC·Filed 2001·Granted Jan 20, 2004·133 cites·62 claims
- 0296US6597193B2Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage currentSEMICONDUCTOR DIAGNOSTICS INC·Filed 2001·Granted Jul 22, 2003·129 cites·27 claims
- 0390US7202691B2Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafersSEMICONDUCTOR DIAGNOSTICS INC·Filed 2005·Granted Apr 10, 2007·32 cites·18 claims
- 0490US6114865ADevice for electrically contacting a floating semiconductor wafer having an insulating filmSEMICONDUCTOR DIAGNOSTICS INC·Filed 1999·Granted Sep 5, 2000·132 cites·19 claims
- 0590US6037797AMeasurement of the interface trap charge in an oxide semiconductor layer interfaceSEMICONDUCTOR DIAGNOSTICS INC·Filed 1997·Granted Mar 14, 2000·85 cites·20 claims
- 0690US5025145AMethod and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurementsLAGOWSKI JACEK J·Filed 1988·Granted Jun 18, 1991·71 cites·24 claims
- 0789US12027430B1Semiconductor doping characterization method using photoneutralization time constant of corona surface chargeSEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD·Filed 2023·Granted Jul 2, 2024·1 cites·20 claims
- 0889US5773989AMeasurement of the mobile ion concentration in the oxide layer of a semiconductor waferUNIV SOUTH FLORIDA·Filed 1995·Granted Jun 30, 1998·130 cites·24 claims
- 0988US6538462B1Method for measuring stress induced leakage current and gate dielectric integrity using corona dischargeSEMICONDUCTOR DIAGNOSTICS INC·Filed 1999·Granted Mar 25, 2003·95 cites·30 claims
- 1088US6512384B1Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltagesSEMICONDUCTOR DIAGNOSTICS INC·Filed 2000·Granted Jan 28, 2003·52 cites·33 claims
- 1185US10969370B2Measuring semiconductor doping using constant surface potential corona chargingSEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD·Filed 2015·Granted Apr 6, 2021·5 cites·18 claims
- 1280US5177351AMethod and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurementsLAGOWSKI JACEK J·Filed 1990·Granted Jan 5, 1993·47 cites·29 claims
- 1378US9685906B2Photoluminescence mapping of passivation defects for silicon photovoltaicsSemilab SDI LLC·Filed 2014·Granted Jun 20, 2017·5 cites·15 claims
- 1477US5977788AElevated temperature measurement of the minority carrier lifetime in the depletion layer of a semiconductor waferFiled 1997·Granted Nov 2, 1999·52 cites·14 claims
- 1576US4011745ASemiconductor sensorsMASSACHUSETTS INST TECHNOLOGY·Filed 1975·Granted Mar 15, 1977·20 cites·11 claims
- 1673US12154833B2Semiconductor doping characterization method using photoneutralization time constant of corona surface chargeSEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD·Filed 2024·Granted Nov 26, 2024·0 cites·24 claims
- 1772US4498772AMethod to determine the crystalline properties of an interface of two materials by an optical techniqueRCA CORP·Filed 1982·Granted Feb 12, 1985·26 cites·4 claims
- 1870US8912799B2Accurate measurement of excess carrier lifetime using carrier decay methodSEMICONDUCTOR PHYSICS LAB CO LTD·Filed 2012·Granted Dec 16, 2014·3 cites·14 claims
- 1967US6815974B1Determining composition of mixed dielectricsSEMICONDUCTOR DIAGNOSTICS INC·Filed 2003·Granted Nov 9, 2004·7 cites·24 claims
- 2066US5663657ADetermining long minority carrier diffusion lengthsUNIV SOUTH FLORIDA·Filed 1994·Granted Sep 2, 1997·48 cites·30 claims
- 2161US5369495ASemiconductor contaminant sensing system and methodUNIV SOUTH FLORIDA·Filed 1992·Granted Nov 29, 1994·32 cites·33 claims
- 2260US6771091B2Method and system for elevated temperature measurement with probes designed for room temperature measurementSEMICONDUCTOR DIAGNOSTICS INC·Filed 2002·Granted Aug 3, 2004·13 cites·20 claims
- 2359US8093920B2Accurate measuring of long steady state minority carrier diffusion lengthsLAGOWSKI JACEK·Filed 2009·Granted Jan 10, 2012·2 cites·17 claims
- 2457US4429047AMethod for determining oxygen content in semiconductor materialRCA CORP·Filed 1981·Granted Jan 31, 1984·14 cites·11 claims
- 2552US11561254B2Topside contact device and method for characterization of high electron mobility transistor (HEMT) heterostructure on insulating and semi-insulating substratesSEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD·Filed 2021·Granted Jan 24, 2023·0 cites·10 claims
- 2651US4642565AMethod to determine the crystalline properties of an interface of two materials by photovoltage phenomenonRCA CORP·Filed 1984·Granted Feb 10, 1987·10 cites·9 claims
- 2743US10763179B2Non-contact method to monitor and quantify effective work function of metalsSEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD·Filed 2016·Granted Sep 1, 2020·0 cites·15 claims
- 2842US2009047748A1Enhanced sensitivity non-contact electrical monitoring of copper contamination on silicon surfaceSAVTCHOUK ALEXANDRE·Filed 2008·Application pending·0 cites
- 2935US2018315630A1Charge Metrology for Integrated MeasurementSEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD·Filed 2018·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jacek Lagowski files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →